MR25H256APDFR
MR25H256APDFR
Mfr. #:
MR25H256APDFR
Manufacturer:
Everspin Technologies
Description:
NVRAM 256Kb 3.3V 32Kx8 SPI
Lifecycle:
New from this manufacturer.
Datasheet:
MR25H256APDFR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
MR25H256APDFR more Information
Specifications
Product Attribute
Attribute Value
RoHS:
Y
Packaging:
Reel
Product Category:
NVRAM
Product Type:
NVRAM
Subcategory:
Memory & Data Storage
Series:
MR25H256
Manufacturer:
Everspin Technologies
Brand:
Everspin Technologies
Package / Case:
DFN-8
Factory Pack Quantity:
4000
Tags
MR25H256APDF, MR25H256A, MR25H256, MR25H, MR25, MR2
MR25H256APDFR Comment
  • NI

    George Wilson 2020-03-05

    The parts work perfect, thank you so much.

  • NO

    Donna White 2020-02-22

    Generally I buy parts from Arrow or Avnet, but after I found this website, I change to buy parts from them .they supply same goods with a lower price! They help me to save lot money.

  • RO

    Donald Jones 2020-02-12

    Parts arrived fast and all were genuine. Very professional. Excellent service, again. Thank you.

  • KZ

    David 2020-02-04

    Generally I buy parts from Mouser or Arrow, but after I found this website, I change to buy parts from them .they supply same goods with a lower price! They help me to save a lot money.

  • GP

    Steven 2020-01-29

    Generally I buy parts from Digikey or TME, but after I found this website, I change to buy parts from them .they supply same goods with a lower price! They help me to save a lot money. Many thanks

  • US

    William Smith 2020-01-25

    OMO meets all my requirements, highly recommended

More Information
Serial SPI MRAMs
Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
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Availability
Stock:
Available
On Order:
4500
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