DMN1023UCB4-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

U-WLB1010-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

5.1 A

Rds On - Drain-Source Resistance:

23 mOhms

Vgs th - Gate-Source Threshold Voltage:

0.4 V

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

8 S

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

6 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18 ns

Typical Turn-On Delay Time:

3 ns

Tags

DMN102, DMN10, DMN1, DMN