RFD8P05SM

RFD8P05SM
Mfr. #:
RFD8P05SM
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET TO-252AA P-Ch Power
Lifecycle:
New from this manufacturer.
Datasheet:
RFD8P05SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RFD8P05SM DatasheetRFD8P05SM Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
N
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
48 W
Configuration:
Single
Channel Mode:
Enhancement
Height:
2.39 mm
Length:
6.73 mm
Transistor Type:
1 P-Channel
Width:
6.22 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
30 ns
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
16 ns
Unit Weight:
0.139332 oz
Tags
RFD8P05S, RFD8P05, RFD8P0, RFD8P, RFD8, RFD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order TO-252AA P-Ch Power
***i-Key
MOSFET P-CH 50V 8A TO-252AA
Part # Mfg. Description Stock Price
RFD8P05SM
DISTI # RFD8P05SM-ND
ON SemiconductorMOSFET P-CH 50V 8A TO-252AA
RoHS: Not compliant
Min Qty: 1800
Container: Tube
Limited Supply - Call
    RFD8P05SMFairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    3600
    • 1000:$0.2200
    • 500:$0.2300
    • 100:$0.2400
    • 25:$0.2500
    • 1:$0.2700
    RFD8P05SM9AHarris SemiconductorPower Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    3171
    • 1000:$0.9400
    • 500:$0.9900
    • 100:$1.0300
    • 25:$1.0800
    • 1:$1.1600
    RFD8P05SM9AS2463Harris Semiconductor 
    RoHS: Not Compliant
    2500
    • 1000:$0.4700
    • 500:$0.5000
    • 100:$0.5200
    • 25:$0.5400
    • 1:$0.5800
    RFD8P05SM
    DISTI # 512-RFD8P05SM
    ON SemiconductorMOSFET TO-252AA P-Ch Power
    RoHS: Not compliant
    0
      RFD8P05SM9A
      DISTI # 512-RFD8P05SM9A
      ON SemiconductorMOSFET TO-252
      RoHS: Not compliant
      0
        RFD8P05SMHarris Semiconductor8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA431
        • 297:$0.9375
        • 134:$1.0125
        • 1:$2.2500
        RFD8P05SMHARTING Technology Group 
        RoHS: Not Compliant
        Europe - 3017
          RFD8P05SM96HARTING Technology Group 
          RoHS: Not Compliant
          Europe - 750
            RFD8P05SM9AHARTING Technology Group 
            RoHS: Not Compliant
            Europe - 54200
              RFD8P05SMHarris SemiconductorINSTOCK3751
                Image Part # Description
                RFD8P05

                Mfr.#: RFD8P05

                OMO.#: OMO-RFD8P05

                MOSFET TO-251AA P-Ch Power
                RFD8P03

                Mfr.#: RFD8P03

                OMO.#: OMO-RFD8P03-1190

                New and Original
                RFD8P05SM

                Mfr.#: RFD8P05SM

                OMO.#: OMO-RFD8P05SM-ON-SEMICONDUCTOR

                MOSFET P-CH 50V 8A TO-252AA
                RFD8P05SM96

                Mfr.#: RFD8P05SM96

                OMO.#: OMO-RFD8P05SM96-1190

                New and Original
                RFD8P05SM9A

                Mfr.#: RFD8P05SM9A

                OMO.#: OMO-RFD8P05SM9A-1190

                Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RFD8P06ESM

                Mfr.#: RFD8P06ESM

                OMO.#: OMO-RFD8P06ESM-1190

                Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RFD8P06ESM9A

                Mfr.#: RFD8P06ESM9A

                OMO.#: OMO-RFD8P06ESM9A-1190

                (Alt: RFD8P06ESM9A)
                RFD8P06LE

                Mfr.#: RFD8P06LE

                OMO.#: OMO-RFD8P06LE-1190

                Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
                RFD8P06LESM

                Mfr.#: RFD8P06LESM

                OMO.#: OMO-RFD8P06LESM-1190

                8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
                RFD8P06LESM9A

                Mfr.#: RFD8P06LESM9A

                OMO.#: OMO-RFD8P06LESM9A-1190

                - Bulk (Alt: RFD8P06LESM9A)
                Availability
                Stock:
                Available
                On Order:
                2000
                Enter Quantity:
                Current price of RFD8P05SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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