FDB8160_F085

Mfr. #:: FDB8160_F085
Manufacturer:: Fairchild Semiconductor
Description:: IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDB8160_F085 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Packaging: Reel

Unit-Weight: 0.046296 oz

Mounting-Style: SMD/SMT

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 254 W

Fall-Time: 27 ns

Rise-Time: 18.9 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 80 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.9 V

Rds-On-Drain-Source-Resistance: 1.5 mOhms

Transistor-Polarity: N-Channel

Qg-Gate-Charge: 187 nC

Tags: FDB816, FDB81, FDB8, FDB

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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FDB8160_F085 Description

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ

*** Stop Electro: Power Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

***r Electronics: Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***i-Key: MOSFET N-CH 30V 75A D2PAK

***Yang: TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk

***nell: MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa

***emi: N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

***ure Electronics: N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***et: Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: Single N-Channel 30 V 9 mOhm 27 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***Yang: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK - Rail/Tube

***(Formerly Allied Electronics): MOSFET, 30V, 90A, 9 mOhm, 27 nC Qg, D2-Pak

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ure Electronics: Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 87A D2PAK

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 47uF 10volts *Derate Voltage/Temp

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:87A; On Resistance, Rds(on):6.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
FDB8160-F085 DISTI # FDB8160-F085TR-ND	ON Semiconductor	MOSFET N-CH 30V 80A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Limited Supply - Call
FDB8160-F085 DISTI # FDB8160-F085CT-ND	ON Semiconductor	MOSFET N-CH 30V 80A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDB8160-F085 DISTI # FDB8160-F085DKR-ND	ON Semiconductor	MOSFET N-CH 30V 80A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDB8160_F085 DISTI # FDB8160-F085	ON Semiconductor	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB8160-F085) Min Qty: 234 Container: Bulk	Americas - 0	234:$1.2900 468:$1.2900 702:$1.2900 1170:$1.2900 2340:$1.2900
FDB8160-F085 DISTI # 48AC0890	ON Semiconductor	NMOS D2PAK 30V 1.8 MOHM / REEL	0
FDB8160-F085	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	781	1000:$1.4100 500:$1.4800 100:$1.5400 25:$1.6100 1:$1.7300

Image	Part #	Description
	Mfr.#: FDB8160-F085 OMO.#: OMO-FDB8160-F085	MOSFET 30V N-Channel PowerTrench MOSFET
	Mfr.#: FDB8160_F085 OMO.#: OMO-FDB8160-F085-126	IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
	Mfr.#: FDB8160 OMO.#: OMO-FDB8160-ON-SEMICONDUCTOR	MOSFET N-CH 30V 80A D2PAK
	Mfr.#: FDB8160-F085 OMO.#: OMO-FDB8160-F085-ON-SEMICONDUCTOR	MOSFET N-CH 30V 80A D2PAK

FDB8160_F085

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes