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IRF7807APBF

IRF7807APBF
Mfr. #:
IRF7807APBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 25mOhms 12nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7807APBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7807APBF DatasheetIRF7807APBF Datasheet (P4-P6)IRF7807APBF Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
6.6 A
Rds On - Drain-Source Resistance:
25 mOhms
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
12 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Chip-Set for DC-DC Converters
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
95
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
SP001566402
Unit Weight:
0.019048 oz
Tags
IRF7807A, IRF7807, IRF780, IRF78, IRF7, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF7807APBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC
***Components
MOSFET N-Channel 30V 8.3A SOIC8
***th Star Micro
MOSFET N-CH 30V 8.3A 8-SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***eco
30V 8.300A SO-8 <AZ
***nell
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:8.3A; Resistance, Rds On:0.025ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:66A; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:F7807A; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Row Pitch:6.3mm; SMD Marking:F7807A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
Part # Mfg. Description Stock Price
IRF7807APBF
DISTI # IRF7807APBF-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF7807APBF
    DISTI # IRF7807APBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC - Rail/Tube (Alt: IRF7807APBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 37
      IRF7807APBF
      DISTI # 70018269      		Infineon Technologies AGIRF7807APBF N-channel MOSFET Transistor,8.3 A,30 V,8-Pin SOIC
      RoHS: Compliant      		0
      • 3800:$1.3100
      • 7600:$1.2840
      • 19000:$1.2450
      • 38000:$1.1920
      • 95000:$1.1140
      IRF7807APBF
      DISTI # 942-IRF7807APBF      		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 25mOhms 12nC
      RoHS: Compliant      		0
        IRF7807APBF
        DISTI # 9102930        		Infineon Technologies AGMOSFET, N, SO-8
        RoHS: Compliant        		0
        • 1:$1.6100
        • 10:$1.3200
        • 100:$1.0700
        • 500:$0.9570
        • 1000:$0.8490
        • 2500:$0.7890
        • 10000:$0.7620
        • 25000:$0.7140
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        OMO.#: OMO-IRF7809AVTRPBF-1-1190

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        Availability
        Stock:
        Available
        On Order:
        1500
        Enter Quantity:
        Current price of IRF7807APBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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