FDU8586

FDU8586
Mfr. #:
FDU8586
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 20V 35A I-PAK
Lifecycle:
New from this manufacturer.
Datasheet:
FDU8586 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDU8586 DatasheetFDU8586 Datasheet (P4-P6)FDU8586 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
F
Product Category
FETs - Single
Tags
FDU8, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 20V 35A I-PAK
***ser
MOSFETs 20V,35A,5.5 OHM, NCH, IPAK, PO
***ark
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
***ser
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***or
MOSFET N-CH 24V 12A/32A IPAK
*** Electronics
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal 24V 95A N-Channel
***or
MOSFET N-CH 24V 12A IPAK
***el Electronic
RES SMD 1.8 OHM 5% 1/4W 1206
***ical
Trans MOSFET N-CH 25V 35A 3-Pin(3+Tab) IPAK Tube
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***S
French Electronic Distributor since 1988
***(Formerly Allied Electronics)
MOSFET, N Ch., 20V, 37A, 15 MOHM, 4.7 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:37A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***el Electronic
Crystals 32MHz 10pF 80Ohms 4-SMD, No Lead Tape & Reel (TR) 1 (Unlimited) MHz Crystal Fundamental MURATA - XRCGB32M000F2N13R0 - Crystal, 32 MHz, SMD, 2mm x 1.6mm, 30 ppm, 10 pF, 20 ppm, XRCGB Series
***nell
MOSFET, N, 20V, I-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:37A; Resistance, Rds On:0.015ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.1V; Case Style:I-PAK; Termination Type:Through Hole; Current, Idm Pulse:144A; No. of Pins:3; Power Dissipation:35mW; SMD Marking:35; Time, t Off:9.2ns; Time, t On:5.4ns; Voltage, Vds Max:20V
***ter Electronics
20V,35A,9 OHM, NCH POWER TRENCH MOSFET
***ark
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 49.5W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Alternate Case Style: TO-251AA; Capacitance Ciss Typ: 1085pF; Current Id Max: 35A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 175°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pin Configuration: 1(G), 2(D), 3(S); Pulse Current Idm: 159A; Termination Type: Through Hole; Voltage Vds: 20V; Voltage Vds Typ: 20V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.5V
***inecomponents.com
25V,35A,14OHM, NCH, IPAK, POWER TRENCH MOSFET
***Yang
MOSFET 25V N-Channel PowerTrench MOSFET - Bulk
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Part # Mfg. Description Stock Price
FDU8586
DISTI # FDU8586-ND
ON SemiconductorMOSFET N-CH 20V 35A I-PAK
RoHS: Compliant
Min Qty: 1800
Container: Tube
Limited Supply - Call
    FDU8586
    DISTI # 512-FDU8586
    ON SemiconductorMOSFET 20V 35A 5.5 OHM NCH IPAK PO
    RoHS: Compliant
    0
      FDU8586Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant
      6297
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
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      Availability
      Stock:
      Available
      On Order:
      4500
      Enter Quantity:
      Current price of FDU8586 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.14
      $1.14
      10
      $1.08
      $10.83
      100
      $1.03
      $102.60
      500
      $0.97
      $484.50
      1000
      $0.91
      $912.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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