FDD8586/FDU8586 N-Channel PowerTrench
®
MOSFET
FDD8586/FDU8586 Rev. B www.fairchildsemi.com4
Figure 7.
0 5 10 15 20 25 30 35
0
2
4
6
8
10
V
DD
= 10V
V
DD
= 7V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 13V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
5000
30
Capacitance vs Drain to Source Voltage
Figure 9.
0.01 0.1 1 10 100 1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
AS
, AVALANCHE CURRENT(A)
50
Unclamped Inductive Switching
Capability
Figure 10.
25 50 75 100 125 150 175
0
20
40
60
80
100
CURRENT LIMITED
BY PACKAGE
R
θJC
= 1.94
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
110
0.1
1
10
100
1000
LIMITED BY
PACKAGE
10us
DC
10ms
1ms
100us
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
O
C
50
Forward Bias Safe Operating Area Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
10000
V
GS
= 10V
SINGLE PULSE
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
50
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 T
C
–
150
----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics T
J
= 25°C unless otherwise noted
