IPL60R185CFD7AUMA1

IPL60R185CFD7AUMA1
Mfr. #:
IPL60R185CFD7AUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPL60R185CFD7AUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPL60R185CFD7AUMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
14 A
Rds On - Drain-Source Resistance:
153 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
28 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
85 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Series:
CoolMOS CFD7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
77 ns
Typical Turn-On Delay Time:
32 ns
Part # Aliases:
IPL60R185CFD7 SP001617940
Tags
IPL60R185C, IPL60R185, IPL60R18, IPL60R1, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 185mΩ 85W 600V PG-VSON-4
***ark
Mosfet, N-Ch, 600V, 14A, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.153Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPL60R185CFD7AUMA1
DISTI # V36:1790_18787586
Infineon Technologies AGHIGH POWER_NEW0
  • 3000000:$1.2670
  • 1500000:$1.2680
  • 300000:$1.3590
  • 30000:$1.4970
  • 3000:$1.5190
IPL60R185CFD7AUMA1
DISTI # IPL60R185CFD7AUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 51A PGVSON-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2903In Stock
  • 1000:$1.6464
  • 500:$1.9522
  • 100:$2.2932
  • 10:$2.7990
  • 1:$3.1200
IPL60R185CFD7AUMA1
DISTI # IPL60R185CFD7AUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 51A PGVSON-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2903In Stock
  • 1000:$1.6464
  • 500:$1.9522
  • 100:$2.2932
  • 10:$2.7990
  • 1:$3.1200
IPL60R185CFD7AUMA1
DISTI # IPL60R185CFD7AUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$1.4615
  • 3000:$1.5186
IPL60R185CFD7AUMA1
DISTI # IPL60R185CFD7AUMA1
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 185mΩ 85W 600V PG-VSON-4 - Tape and Reel (Alt: IPL60R185CFD7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$1.2900
  • 12000:$1.3900
  • 18000:$1.3900
  • 3000:$1.4900
  • 6000:$1.4900
IPL60R185CFD7AUMA1
DISTI # SP001617940
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 185mΩ 85W 600V PG-VSON-4 (Alt: SP001617940)
RoHS: Compliant
Min Qty: 3000
Europe - 0
  • 18000:€1.1900
  • 30000:€1.1900
  • 12000:€1.2900
  • 6000:€1.4900
  • 3000:€1.7900
IPL60R185CFD7AUMA1
DISTI # 43AC9325
Infineon Technologies AGMOSFET, N-CH, 600V, 14A, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.153ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes1510
  • 1000:$1.5400
  • 500:$1.8200
  • 250:$2.0300
  • 100:$2.1400
  • 50:$2.2500
  • 25:$2.3600
  • 10:$2.4600
  • 1:$2.9000
IPL60R185CFD7AUMA1
DISTI # 726-IPL60R185CFD7AUM
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$2.8700
  • 10:$2.4400
  • 100:$2.1200
  • 250:$2.0100
  • 500:$1.8000
  • 1000:$1.5200
  • 3000:$1.4400
IPL60R185CFD7AUMA1
DISTI # 2807987
Infineon Technologies AGMOSFET, N-CH, 600V, 14A, VSON1820
  • 500:£1.4000
  • 250:£1.5700
  • 100:£1.6500
  • 10:£1.9000
  • 1:£2.5200
IPL60R185CFD7AUMA1
DISTI # 2807987
Infineon Technologies AGMOSFET, N-CH, 600V, 14A, VSON
RoHS: Compliant
1460
  • 1000:$2.1900
  • 500:$2.2300
  • 250:$2.3400
  • 100:$2.4800
  • 10:$2.8000
  • 1:$3.0000
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Availability
Stock:
Available
On Order:
1989
Enter Quantity:
Current price of IPL60R185CFD7AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.87
$2.87
10
$2.44
$24.40
100
$2.12
$212.00
250
$2.01
$502.50
500
$1.80
$900.00
1000
$1.52
$1 520.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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