PartNumber | IPL60R105P7AUMA1 | IPL60R115CFD7AUMA1 | IPL60R104C7AUMA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VSON-4 | VSON-4 | VSON-4 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 33 A | 22 A | - |
Rds On Drain Source Resistance | 85 mOhms | 115 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 45 nC | 42 nC | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 137 W | 124 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Series | CoolMOS P7 | - | CoolMOS C7 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5 ns | 3.8 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 12 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 83 ns | 85 ns | - |
Typical Turn On Delay Time | 15 ns | 25 ns | - |
Part # Aliases | IPL60R105P7 SP001657410 | IPL60R115CFD7 SP001715632 | IPL60R104C7 SP001298008 |
Tradename | - | - | CoolMOS |
Height | - | - | 1.1 mm |
Length | - | - | 8 mm |
Width | - | - | 8 mm |