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IPL60R185C7AUMA1

IPL60R185C7AUMA1
Mfr. #:
IPL60R185C7AUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPL60R185C7AUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPL60R185C7AUMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
185 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
77 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
1.1 mm
Length:
8 mm
Series:
CoolMOS C7
Width:
8 mm
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
46 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
IPL60R185C7 SP001296238
Tags
IPL60R185C, IPL60R185, IPL60R18, IPL60R1, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13A 4-Pin VSON EP T/R
***ark
Mosfet, N-Ch, 600V, 13A, 77W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.159Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPL60R185C7AUMA1
DISTI # IPL60R185C7AUMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 13A 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.4709
IPL60R185C7AUMA1
DISTI # IPL60R185C7AUMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL60R185C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 18000:$1.2900
  • 30000:$1.2900
  • 6000:$1.3900
  • 12000:$1.3900
  • 3000:$1.4900
IPL60R185C7AUMA1
DISTI # SP001296238		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001296238)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€1.0900
  • 18000:€1.1900
  • 12000:€1.2900
  • 6000:€1.3900
  • 3000:€1.6900
IPL60R185C7AUMA1
DISTI # IPL60R185C7		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPL60R185C7)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 150000:$1.3333
  • 75000:$1.3504
  • 30000:$1.3679
  • 15000:$1.3859
  • 9000:$1.4234
  • 6000:$1.4629
  • 3000:$1.5047
IPL60R185C7AUMA1
DISTI # 84AC6835		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, 77W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.159ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes427
  • 1000:$1.4800
  • 500:$1.7600
  • 250:$1.9600
  • 100:$2.0700
  • 50:$2.1800
  • 25:$2.2900
  • 10:$2.3900
  • 1:$2.8100
IPL60R185C7AUMA1
DISTI # 726-IPL60R185C7AUMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9400
  • 500:$1.7400
  • 1000:$1.4700
  • 3000:$1.4000
IPL60R185C7AUMA1
DISTI # 2983365		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, 77W, VSON2987
  • 100:£1.8500
  • 10:£2.1500
  • 1:£2.8400
IPL60R185C7AUMA1
DISTI # 2983365		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, 77W, VSON
RoHS: Compliant		2997
  • 1000:$2.1100
  • 500:$2.2900
  • 250:$2.5400
  • 100:$2.6900
  • 10:$3.0900
  • 1:$4.1000
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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IPL60R185C7AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.78
$2.78
10
$2.37
$23.70
100
$2.05
$205.00
250
$1.94
$485.00
500
$1.74
$870.00
1000
$1.47
$1 470.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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