IPL60R104C7AUMA1

Mfr. #:: IPL60R104C7AUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPL60R104C7AUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPL60R104C7AUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSON-4

Vds - Drain-Source Breakdown Voltage:: 600 V

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 8 mm

Series:: CoolMOS C7

Width:: 8 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: IPL60R104C7 SP001298008

Tags: IPL60R10, IPL60R1, IPL60, IPL6, IPL

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPL60R104C7AUMA1 Description

***ical: Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R

***ark: MOSFET, N-CH, 600V, 20A, 150DEG C, 122W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***icroelectronics: N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

***ure Electronics: N-Channel 600 V 21.5 A 135 mOhm MDmesh M2 Power MosFet - PowerFLAT 8 x 8

***p One Stop: Trans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R

***el Electronic: Flash Mem Serial 3.3V 2G-Bit 256M x 8 30us 48-Pin TSOP-I

***icroelectronics SCT: Power MOSFETs, 600V, 22A, PowerFLAT 8x8 HV, Tape and Reel

***i-Key: MOSFET N-CH 600V 22A PWRFLAT HV

***ronik: N-CH 600V 22A 115mOhm PFL8x8HV

***icroelectronics: N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package

***ure Electronics: N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK

***nell: MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***r Electronics: Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 650 V 99 mOhm 45 nC CoolMOS Power Mosfet - PG-VSON-4

***ark: Mosfet, N-Ch, 650V, 21A, 128W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.088Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-VSON-4, RoHS

***ineon: Infineons new CoolMOS C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***ark: MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

***ure Electronics: E-Series N-Channel 600 V 227 W 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK

***et: Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

***ure Electronics: N-Channel 600 V 135 mOhm 77 nC SMT E Series Power Mosfet - PowerPAK 8x8

***el Electronic: VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V

***nell: MOSFET, N-CH, 600V, 25A, POWERPAK-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.117ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

***ure Electronics: N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IPL60R104C7AUMA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPL60R104C7AUMA1 DISTI # 33132396	Infineon Technologies AG	Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R	3000	3000:$2.5888
IPL60R104C7AUMA1 DISTI # IPL60R104C7AUMA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 20A 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$2.8864
IPL60R104C7AUMA1 DISTI # V36:1790_13984889	Infineon Technologies AG	Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R	0	3000000:$2.4080 1500000:$2.4100 300000:$2.5740 30000:$2.8490 3000:$2.8940
IPL60R104C7AUMA1 DISTI # IPL60R104C7AUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL60R104C7AUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$2.5900 30000:$2.5900 12000:$2.6900 6000:$2.7900 3000:$2.8900
IPL60R104C7AUMA1 DISTI # SP001298008	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001298008) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€2.1900 18000:€2.3900 12000:€2.5900 6000:€2.6900 3000:€2.7900
IPL60R104C7AUMA1 DISTI # IPL60R104C7	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPL60R104C7) RoHS: Compliant Min Qty: 3000	Asia - 0	150000:$2.6163 75000:$2.6499 30000:$2.6843 15000:$2.7196 9000:$2.7931 6000:$2.8707 3000:$2.9527
IPL60R104C7AUMA1 DISTI # 84AC6833	Infineon Technologies AG	MOSFET, N-CH, 600V, 20A, 122W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.09ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	3163	1000:$2.9200 500:$3.4600 250:$3.8600 100:$4.0700 50:$4.2800 25:$4.4900 10:$4.7000 1:$5.5200
IPL60R104C7AUMA1 DISTI # 726-IPL60R104C7AUMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$5.4700 10:$4.6500 100:$4.0300 250:$3.8200 500:$3.4300 1000:$2.8900 3000:$2.7400
IPL60R104C7AUMA1 DISTI # 2983363	Infineon Technologies AG	MOSFET, N-CH, 600V, 20A, 122W, VSON	3138	100:£3.7000 10:£4.2600 1:£5.5600
IPL60R104C7AUMA1 DISTI # 2983363	Infineon Technologies AG	MOSFET, N-CH, 600V, 20A, 122W, VSON RoHS: Compliant	3138	25:$4.1400 1:$4.5700

Image	Part #	Description
	Mfr.#: IPL60R105P7AUMA1 OMO.#: OMO-IPL60R105P7AUMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPL60R104C7AUMA1 OMO.#: OMO-IPL60R104C7AUMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPL60R104C7 OMO.#: OMO-IPL60R104C7-1190	New and Original
	Mfr.#: IPL60R104C7AUMA1 OMO.#: OMO-IPL60R104C7AUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 20A 4VSON
	Mfr.#: IPL60R105P7AUMA1 OMO.#: OMO-IPL60R105P7AUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 4VSON

IPL60R104C7AUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes