STD2HNK60Z-1

STD2HNK60Z-1
Mfr. #:
STD2HNK60Z-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A
Lifecycle:
New from this manufacturer.
Datasheet:
STD2HNK60Z-1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STD2HNK60Z-1 more Information STD2HNK60Z-1 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
2 A
Rds On - Drain-Source Resistance:
4.8 Ohms
Vgs th - Gate-Source Threshold Voltage:
3.75 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
11 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
45 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperMESH
Packaging:
Tube
Height:
6.2 mm
Length:
6.6 mm
Series:
STD2HNK60Z-1
Transistor Type:
1 N-Channel
Width:
2.4 mm
Brand:
STMicroelectronics
Forward Transconductance - Min:
1.5 S
Fall Time:
50 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13 ns
Typical Turn-On Delay Time:
10 ns
Unit Weight:
0.139332 oz
Tags
STD2HNK60Z-1, STD2H, STD2, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 4.8 Ohm SuperMesh Power MosFet - TO-251
***et Europe
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
***an P&S
600V,4.4Ohm,2A,N-CHANNEL Power MOSFET
*** Source Electronics
MOSFET N-CH 600V 2A IPAK
***rt123
DPAK (TO-252)
***ark
N Channel Mosfet, 600V, 2A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(On):4.4Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Msl:- Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:120mJ; Capacitance Ciss Typ:280pF; Current Iar:2A; Current Id Max:2A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:2.77°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:3V
***nell
MOSFET, N, I-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):4.4ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.75V; Dissipazione di Potenza Pd:45W; Modello Case Transistor:TO-251AA; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015); Capacità Ciss Tipica:280pF; Corrente Iar:2A; Corrente Id Max:2A; Corrente di Impulso Idm:8A; Energia Singolo Impulso Avalanche Eas:120mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Termica A da Giunzione a Case:2.77°C/W; Temperatura di Esercizio Min:-55°C; Temperatura di Giunzione Tj Max:150°C; Temperatura di Giunzione Tj Min:-55°C; Tensione Vds Tipica:600V; Tensione Vgs Max:30V; Tensione Vgs di Misurazione Rds on:10V; Tensione Vgs th Max:4.5V; Tensione Vgs th Min:3V
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Part # Mfg. Description Stock Price
STD2HNK60Z-1
DISTI # V79:2366_17796131
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
1775
  • 24000:$0.4419
  • 9000:$0.4557
  • 3000:$0.4594
STD2HNK60Z-1
DISTI # V36:1790_06559824
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
530
  • 24000:$0.4419
  • 9000:$0.4557
  • 3000:$0.4594
STD2HNK60Z-1
DISTI # 497-12783-5-ND
STMicroelectronicsMOSFET N-CH 600V 2A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
5988In Stock
  • 1050:$0.5890
  • 525:$0.7461
  • 150:$0.9621
  • 75:$1.0996
  • 1:$1.3700
STD2HNK60Z-1
DISTI # 28997186
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
8700
  • 6525:$0.1740
  • 4350:$0.1818
  • 2175:$0.1903
  • 75:$0.2137
STD2HNK60Z-1
DISTI # 19268377
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
1835
  • 1000:$0.5592
  • 500:$0.5671
  • 250:$0.5754
  • 126:$0.5838
STD2HNK60Z-1
DISTI # 26119151
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
1775
  • 14:$0.4594
STD2HNK60Z-1
DISTI # 25667408
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
530
  • 530:$0.4594
STD2HNK60Z-1
DISTI # STD2HNK60Z-1
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube (Alt: STD2HNK60Z-1)
RoHS: Compliant
Min Qty: 75
Container: Tube
Europe - 1950
  • 75:€0.2569
  • 150:€0.2099
  • 300:€0.1919
  • 450:€0.1779
  • 750:€0.1649
STD2HNK60Z-1
DISTI # STD2HNK60Z-1
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD2HNK60Z-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.5349
  • 6000:$0.5099
  • 12000:$0.4869
  • 18000:$0.4649
  • 30000:$0.4549
STD2HNK60Z-1
DISTI # STD2HNK60Z-1
STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube (Alt: STD2HNK60Z-1)
RoHS: Compliant
Min Qty: 6000
Container: Tube
Asia - 0
    STD2HNK60Z-1
    DISTI # 57P0735
    STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube - Bulk (Alt: 57P0735)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 1:$0.4970
    • 12000:$0.4570
    STD2HNK60Z-1
    DISTI # 57P0735
    STMicroelectronicsN CHANNEL MOSFET, 600V, 2A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):4.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:- , RoHS Compliant: Yes1835
    • 1:$0.3970
    • 10:$0.3970
    • 100:$0.3970
    • 500:$0.3970
    • 1000:$0.3970
    • 2500:$0.3970
    • 10000:$0.3970
    STD2HNK60Z-1
    DISTI # 511-STD2HNK60Z-1
    STMicroelectronicsMOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A
    RoHS: Compliant
    2323
    • 1:$1.1800
    • 10:$1.0000
    • 100:$0.7680
    • 500:$0.6790
    • 1000:$0.5360
    • 3000:$0.4750
    • 9000:$0.4570
    STD2HNK60Z1STMicroelectronics 
    RoHS: Compliant
    Europe - 2925
      STD2HNK60Z-1
      DISTI # C1S730200603009
      STMicroelectronicsTrans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
      RoHS: Compliant
      8700
      • 3000:$0.2540
      STD2HNK60Z-1
      DISTI # 1317099
      STMicroelectronicsMOSFET, N, I-PAK
      RoHS: Compliant
      0
      • 5:£0.8420
      • 25:£0.7570
      • 100:£0.5810
      • 250:£0.5480
      • 500:£0.5140
      STD2HNK60Z-1STMicroelectronics600V,4.4Ohm,2A,N-CHANNEL Power MOSFET50
      • 1:$0.1900
      • 100:$0.1900
      • 500:$0.1900
      • 1000:$0.1900
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      Availability
      Stock:
      Available
      On Order:
      1985
      Enter Quantity:
      Current price of STD2HNK60Z-1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.18
      $1.18
      10
      $1.00
      $10.00
      100
      $0.77
      $76.80
      500
      $0.68
      $339.50
      1000
      $0.54
      $536.00
      3000
      $0.48
      $1 425.00
      9000
      $0.46
      $4 113.00
      24000
      $0.44
      $10 632.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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