NTMS4816NR2G

Mfr. #:: NTMS4816NR2G
Manufacturer:: ON Semiconductor
Description:: MOSFET NFET SO8 30V 11A NCH 0.030R
Lifecycle:: New from this manufacturer.
Datasheet:: NTMS4816NR2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTMS4816NR2G Datasheet NTMS4816NR2G Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOIC-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 11 A

Rds On - Drain-Source Resistance:: 12.7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.04 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.5 mm

Length:: 5 mm

Product:: MOSFET Small Signal

Series:: NTMS4816N

Transistor Type:: 1 N-Channel

Type:: Power MOSFET

Width:: 4 mm

Brand:: ON Semiconductor

Forward Transconductance - Min:: 26 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 3.8 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21.6 ns

Typical Turn-On Delay Time:: 8 ns

Unit Weight:: 0.019048 oz

Tags: NTMS48, NTMS4, NTMS, NTM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

NTMS4816NR2G Description

***(Formerly Allied Electronics): NTMS4816NR2G N-channel MOSFET Transistor; 11 A; 30 V; 8-Pin SOIC

***th Star Micro: Transistor MOSFET N-CH 30V 9A 8-Pin SOIC N T/R

***emi: Single N-Channel Power MOSFET 30V, 11A, 10mΩ

***ark: Mosfet, N-Ch, 30V, 11A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0082Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

***ure Electronics: N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

***et Europe: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R

***emi: N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

***ark: N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin

***(Formerly Allied Electronics): MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE

***et: Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ponent Stockers USA: 7800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 30V 19A N-Channel

*** Electronics: Trans MOSFET N-CH 30V 11A 8-Pin DSO T/R

***i-Key: MOSFET N-CH 30V 11A 8DSO

***ponent Stockers USA: SMALL SIGNAL FET

Market price

Part #	Mfg.	Description	Stock	Price
NTMS4816NR2G DISTI # V72:2272_07297048	ON Semiconductor	Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R RoHS: Compliant	410	250:$0.2715 100:$0.3016 25:$0.4158 10:$0.4620 1:$0.5516
NTMS4816NR2G DISTI # NTMS4816NR2GOSCT-ND	ON Semiconductor	MOSFET N-CH 30V 6.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	391In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
NTMS4816NR2G DISTI # NTMS4816NR2GOSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 6.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	391In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
NTMS4816NR2G DISTI # NTMS4816NR2GOSTR-ND	ON Semiconductor	MOSFET N-CH 30V 6.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2552
NTMS4816NR2G DISTI # 27141479	ON Semiconductor	Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R RoHS: Compliant	5000	2500:$0.2689
NTMS4816NR2G DISTI # 25773740	ON Semiconductor	Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R RoHS: Compliant	410	500:$0.2683 250:$0.2980 100:$0.3095 32:$0.4157
NTMS4816NR2G DISTI # NTMS4816NR2G	ON Semiconductor	Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS4816NR2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2089 5000:$0.2069 10000:$0.2049 15000:$0.2019 25000:$0.1969
NTMS4816NR2G DISTI # NTMS4816NR2G	ON Semiconductor	Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R (Alt: NTMS4816NR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.1996 5000:$0.1920 7500:$0.1848 12500:$0.1782 25000:$0.1721 62500:$0.1664 125000:$0.1636
NTMS4816NR2G DISTI # 50AC6500	ON Semiconductor	MOSFET, N-CH, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation , RoHS Compliant: Yes	2490	1:$0.7170 10:$0.5860 25:$0.5180 50:$0.4610 100:$0.3950 250:$0.3470 500:$0.2740 1000:$0.2640
NTMS4816NR2G DISTI # 75M5228	ON Semiconductor	N CHANNEL MOSFET, 30V, 9A, SOIC,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):8.2mohm,Operating Temperature Max:150°C,Package / Case:8-SOIC , RoHS Compliant: Yes	0	1:$0.6400 25:$0.4960 100:$0.3200 250:$0.3110 500:$0.3010 1000:$0.2560 2500:$0.2160 5000:$0.2100
NTMS4816NR2G DISTI # 70341382	ON Semiconductor	NTMS4816NR2G N-channel MOSFET Transistor,11 A,30 V,8-Pin SOIC RoHS: Compliant	0	20:$0.6100 50:$0.5800 100:$0.5500 200:$0.5200
NTMS4816NR2G	ON Semiconductor	RoHS: Not Compliant	207935	1000:$0.2700 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3300
NTMS4816NR2G DISTI # 863-NTMS4816NR2G	ON Semiconductor	MOSFET NFET SO8 30V 11A NCH 0.030R RoHS: Compliant	1594	1:$0.6000 10:$0.4960 100:$0.3200 1000:$0.2560 2500:$0.2170 10000:$0.2090 25000:$0.2000
NTMS4816NR2G DISTI # 7804727P	ON Semiconductor	MOSFET N-CHANNEL 30V 11A SOIC8, RL	2150	20:£0.2150 50:£0.1860 100:£0.1650 200:£0.1510
NTMS4816NR2G	ON Semiconductor	INSTOCK	8730
NTMS4816NR2G DISTI # 2845385	ON Semiconductor	MOSFET, N-CH, 30V, 11A, SOIC RoHS: Compliant	2490	5:$0.9380 25:$0.8040 100:$0.5490 250:$0.4500 500:$0.3690 1000:$0.3410 5000:$0.3210
NTMS4816NR2G DISTI # C1S541900265480	ON Semiconductor	Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R RoHS: Compliant	410	250:$0.2980 100:$0.3015 25:$0.4157 10:$0.4618
NTMS4816NR2G DISTI # 2845385	ON Semiconductor	MOSFET, N-CH, 30V, 11A, SOIC RoHS: Compliant	2490	5:£0.5610 25:£0.5130 100:£0.3840 250:£0.3350 500:£0.2850

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	Mfr.#: PMV50ENEAR OMO.#: OMO-PMV50ENEAR-NEXPERIA	MOSFET N-CH 30V TO-236AB
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	Mfr.#: GRM31CR60J227ME11L OMO.#: OMO-GRM31CR60J227ME11L-MURATA-ELECTRONICS	Cap Ceramic 220uF 6.3V X5R 20% Pad SMD 1206 85C T/R
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NTMS4816NR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes