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LND150N3-G-P003

LND150N3-G-P003
Mfr. #:
LND150N3-G-P003
Manufacturer:
Microchip Technology
Description:
MOSFET DepletionMode MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
LND150N3-G-P003 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
LND150N3-G-P003 more Information LND150N3-G-P003 Product Details
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
30 mA
Rds On - Drain-Source Resistance:
1 kOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
740 mW
Configuration:
Single
Channel Mode:
Depletion
Packaging:
Reel
Height:
5.33 mm
Length:
5.21 mm
Product:
MOSFET Small Signal
Transistor Type:
1 N-Channel
Width:
4.19 mm
Brand:
Microchip Technology
Fall Time:
1300 ns
Product Type:
MOSFET
Rise Time:
450 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
90 ns
Unit Weight:
0.016000 oz
Tags
LND150N3-G-P, LND150N3-G, LND150N3, LND150N, LND150, LND15, LND1, LND
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rochip
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***rochip SCT
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***roFlash
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***i-Key
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***ser
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***ark
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***ponent Sense
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***id Electronics
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***S
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***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
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***nell
MOSFET, N, 60V, 0.45A, E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power D
***ource
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
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***ark
N CHANNEL MOSFET, 60V, 600mA, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:600mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
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***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Part # Mfg. Description Stock Price
LND150N3-G-P003
DISTI # V36:1790_06439618		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 2000:$0.3963
LND150N3-G-P003
DISTI # V72:2272_06439618		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		1880
  • 1000:$0.4255
  • 500:$0.4415
  • 250:$0.4575
  • 100:$0.4735
  • 25:$0.4896
  • 10:$0.5561
  • 1:$0.5596
LND150N3-G-P003
DISTI # LND150N3-G-P003CT-ND		Microchip Technology IncMOSFET N-CH 500V 30MA TO92-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1980In Stock
  • 100:$0.3914
  • 25:$0.4224
  • 1:$0.5200
LND150N3-G-P003
DISTI # LND150N3-G-P003DKR-ND		Microchip Technology IncMOSFET N-CH 500V 30MA TO92-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1980In Stock
  • 100:$0.3914
  • 25:$0.4224
  • 1:$0.5200
LND150N3-G-P003
DISTI # LND150N3-G-P003TR-ND		Microchip Technology IncMOSFET N-CH 500V 30MA TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.3914
LND150N3-G-P003
DISTI # 31333942		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		2000
  • 2000:$0.3963
LND150N3-G-P003
DISTI # 30200324		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
RoHS: Compliant		1880
  • 16:$0.5596
LND150N3-G-P003
DISTI # LND150N3-G-P003		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R - Tape and Reel (Alt: LND150N3-G-P003)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.4059
  • 12000:$0.4119
  • 8000:$0.4249
  • 4000:$0.4389
  • 2000:$0.4539
LND150N3-G-P003
DISTI # LND150N3-G-P003		Microchip Technology IncTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R (Alt: LND150N3-G-P003)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Asia - 0
  • 100000:$0.3810
  • 50000:$0.3902
  • 20000:$0.4000
  • 10000:$0.4103
  • 6000:$0.4210
  • 4000:$0.4384
  • 2000:$0.4571
LND150N3-G-P003
DISTI # 67X5306		Microchip Technology IncMOSFET, DEPLETION-MODE, 500V, 1K OHM 3 TO-92 T/R0
  • 100:$0.4030
  • 25:$0.4150
  • 10:$0.4830
  • 1:$0.5820
LND150N3-G-P003
DISTI # 70484012		Microchip Technology IncMOSFET,DEPLETION-MODE,500V,1K Ohm3 TO-92T/R
RoHS: Compliant		0
  • 2000:$0.3830
  • 4000:$0.3750
  • 10000:$0.3640
LND150N3-G-P003
DISTI # LND150N3-G-P003		Microchip Technology IncMOSFETDEPLETION-MODE500V1K Ohm
RoHS: Compliant
Min Qty: 1
Package Multiple: 1
Container: Reel		26000
  • 1000:$0.3600
  • 100:$0.3800
  • 26:$0.4100
  • 1:$0.5000
LND150N3-G-P003
DISTI # 689-LND150N3-G-P003		Microchip Technology IncMOSFET DepletionMode MOSFET
RoHS: Compliant		1720
  • 1:$0.5100
  • 10:$0.5070
  • 25:$0.4220
  • 100:$0.3910
  • 2000:$0.3910
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of LND150N3-G-P003 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.51
$0.51
10
$0.51
$5.07
25
$0.42
$10.55
100
$0.39
$39.10
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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