PartNumber | LND150N3-G | LND150N3-G-P002 | LND150N3-G P005 |
Description | MOSFET 500V 1KOhm | MOSFET DepletionMode MOSFET | MOSFET DepletionMode MOSFET |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
Id Continuous Drain Current | 30 mA | 30 mA | 30 mA |
Rds On Drain Source Resistance | 1 kOhms | 1 kOhms | 1 kOhms |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 740 mW | 740 mW | - |
Configuration | Single | Single | Single |
Channel Mode | Depletion | Depletion | Depletion |
Packaging | Bulk | Reel | Reel |
Height | 5.33 mm | 5.33 mm | - |
Length | 5.21 mm | 5.21 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | FET | - | - |
Width | 4.19 mm | 4.19 mm | - |
Brand | Microchip Technology | Microchip Technology | Microchip Technology |
Forward Transconductance Min | 1 mOhms | - | - |
Fall Time | 1.3 us | 1300 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 0.45 us | 450 ns | - |
Factory Pack Quantity | 1000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 100 ns | 100 ns | - |
Typical Turn On Delay Time | 90 ns | 90 ns | - |
Unit Weight | 0.007760 oz | 0.016000 oz | 0.016000 oz |