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CGH40180PP

CGH40180PP
Mfr. #:
CGH40180PP
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH40180PP Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH40180PP more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
19 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
24 A
Output Power:
220 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440199
Packaging:
Tube
Application:
-
Configuration:
Dual
Height:
4.34 mm
Length:
29 mm
Operating Frequency:
1 GHz to 2.5 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
5.97 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Number of Channels:
2 Channel
Class:
-
Development Kit:
CGH40180PP-TB
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
100
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGH40180PP, CGH4018, CGH401, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440199
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGH40180PP
DISTI # CGH40180PP-ND		WolfspeedRF MOSFET HEMT 28V 440199
RoHS: Compliant
Min Qty: 1
Container: Tray		222In Stock
  • 1:$431.0700
CGH40180PP-TB
DISTI # CGH40180PP-TB-ND		WolfspeedBOARD DEMO AMP CIRCUIT CGH40180
RoHS: Compliant
Min Qty: 1
Container: Bulk		Temporarily Out of Stock
  • 1:$550.0000
CGH40180PP
DISTI # 941-CGH40180PP		Cree, Inc.RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
RoHS: Compliant		55
  • 1:$431.0700
CGH40180PP-TB
DISTI # 941-CGH40180PP-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant		3
  • 1:$550.0000
CGH40180PP
DISTI # CGH40180PP		WolfspeedRF POWER TRANSISTOR
RoHS: Compliant		100
  • 1:$431.0700
CGH40180PP-TB
DISTI # CGH40180PP-TB		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		2
  • 2:$550.0000
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Availability
Stock:
55
On Order:
2038
Enter Quantity:
Current price of CGH40180PP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$409.52
$409.52
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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