We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4667In Stock |
|
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4667In Stock |
|
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 75V 100A TDSON-8 T/R - Tape and Reel (Alt: BSC042NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSC042NE7NS3GATMA1 DISTI # 79X1331 | Infineon Technologies AG | MOSFET, N-CH, 75V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V RoHS Compliant: Yes | 4833 |
|
BSC042NE7NS3 G DISTI # 726-BSC042NE7NS3GXT | Infineon Technologies AG | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 6508 |
|
BSC042NE7NS3GATMA1 DISTI # 726-BSC042NE7NS3GATM | Infineon Technologies AG | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4883 |
|
BSC042NE7NS3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 8672 |
|
BSC042NE7NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 100 |
|
BSC042NE7NS3 G | Infineon Technologies AG | RoHS: Not Compliant | 4938 |
|
BSC042NE7NS3GATMA1 | Infineon Technologies AG | Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 5000Reel |
|
BSC042NE7NS3GATMA1 DISTI # 9064334P | Infineon Technologies AG | MOSFET N-CHANNEL 75V 19A 8-PIN TDSON EP, RL | 730 |
|
BSC042NE7NS3G | Infineon Technologies AG | 120 | ||
BSC042NE7NS3 G DISTI # TMOSP10317 | Infineon Technologies AG | N-CH75V 100A4.2mOhm TDSON-8 RoHS: Compliant | Stock DE - 15000Stock US - 0 |
|
BSC042NE7NS3GATMA1 DISTI # 2432706RL | Infineon Technologies AG | MOSFET, N CH, 75V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC042NE7NS3GATMA1 DISTI # 2432706 | Infineon Technologies AG | MOSFET, N CH, 75V, 100A, TDSON-8 RoHS: Compliant | 4833 |
|
BSC042NE7NS3GATMA1 DISTI # 2432706 | Infineon Technologies AG | MOSFET, N CH, 75V, 100A, TDSON-8 RoHS: Compliant | 4833 |
|
BSC042NE7NS3 G DISTI # C1S322000296077 | Infineon Technologies AG | Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP T/R RoHS: Compliant | 3722 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: 042N03 OMO.#: OMO-042N03-1190 |
New and Original | |
Mfr.#: 042N03L OMO.#: OMO-042N03L-1190 |
New and Original | |
Mfr.#: 042N03L5 OMO.#: OMO-042N03L5-1190 |
New and Original | |
Mfr.#: 042N03LG OMO.#: OMO-042N03LG-1190 |
New and Original | |
Mfr.#: 042N03LSG OMO.#: OMO-042N03LSG-1190 |
New and Original | |
Mfr.#: 042N03MS OMO.#: OMO-042N03MS-1190 |
New and Original | |
Mfr.#: 042N03SG OMO.#: OMO-042N03SG-1190 |
New and Original | |
Mfr.#: 042N10N OMO.#: OMO-042N10N-1190 |
New and Original | |
Mfr.#: 042N7501 OMO.#: OMO-042N7501-1190 |
COIL 220V50HZ | |
Mfr.#: 042NE7NS OMO.#: OMO-042NE7NS-1190 |
New and Original |