IRF7492PBF

IRF7492PBF
Mfr. #:
IRF7492PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 200V 1 N-CH HEXFET 79mOhms 39nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7492PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
3.7 A
Rds On - Drain-Source Resistance:
79 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
39 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
95
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
27 ns
Typical Turn-On Delay Time:
15 ns
Part # Aliases:
SP001554342
Unit Weight:
0.019048 oz
Tags
IRF7492, IRF749, IRF74, IRF7, IRF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ied Electronics & Automation
MOSFET, 200V, 3.7A, 79 MOHM, 39 NC QG, SO-8
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):79mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; SMD Marking:F7492; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRF7492PBF
DISTI # IRF7492PBF-ND
Infineon Technologies AGMOSFET N-CH 200V 3.7A 8-SOIC
RoHS: Compliant
Min Qty: 665
Container: Tube
Limited Supply - Call
    IRF7492PBF
    DISTI # 70018263
    Infineon Technologies AGMOSFET,200V,3.7A,79 MOHM,39 NC QG,SO-8
    RoHS: Compliant
    0
    • 665:$0.8650
    • 1330:$0.8470
    • 3325:$0.8210
    • 6650:$0.7870
    • 16625:$0.7350
    IRF7492PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***155
    • 46:$1.1025
    • 12:$1.3230
    • 1:$2.2050
    IRF7492PBFInternational Rectifier 58
      IRF7492PBF
      DISTI # 9264353
      Infineon Technologies AGMOSFET, N, SO-8
      RoHS: Compliant
      0
      • 1000:$0.8890
      • 500:$0.9520
      • 250:$1.0100
      • 100:$1.1300
      • 10:$1.4700
      • 1:$2.1300
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      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of IRF7492PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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