IRFH4251DTRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

64 A

Rds On - Drain-Source Resistance:

3.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.6 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

15 nC, 66 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

31 W, 63 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

FastIRFet

Packaging:

Reel

Height:

0.9 mm

Length:

6 mm

Transistor Type:

2 N-Channel

Width:

5 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

131 S, 161 S

Fall Time:

15 ns, 60 ns

Product Type:

MOSFET

Rise Time:

61 ns, 105 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns, 35 ns

Typical Turn-On Delay Time:

10 ns, 24 ns

Part # Aliases:

SP001556236

Tags

IRFH4251, IRFH425, IRFH4, IRFH, IRF