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IXFK44N60

IXFK44N60
Mfr. #:
IXFK44N60
Manufacturer:
Littelfuse
Description:
MOSFET DIODE Id44 BVdass600
Lifecycle:
New from this manufacturer.
Datasheet:
IXFK44N60 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK44N60 DatasheetIXFK44N60 Datasheet (P4)
ECAD Model:
More Information:
IXFK44N60 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-264-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
44 A
Rds On - Drain-Source Resistance:
130 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
560 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
26.16 mm
Length:
19.96 mm
Series:
IXFK44N60
Transistor Type:
1 N-Channel
Width:
5.13 mm
Brand:
IXYS
Forward Transconductance - Min:
45 S
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
50 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.352740 oz
Tags
IXFK44, IXFK4, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 Vds 130 mOhm 560 W Power Mosfet - TO-264
***ical
Trans MOSFET N-CH Si 600V 44A 3-Pin(3+Tab) TO-264AA
***S
new, original packaged
***emi
Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264
***ical
Trans MOSFET N-CH 100V 123A 3-Pin (3+Tab) TO-3BPL Rail
***r Electronics
Power Field-Effect Transistor, 123A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:100A; On Resistance, Rds(on):11mohm; Threshold Voltage, Vgs Typ:3.1V; Package/Case:3-TO-264 ;RoHS Compliant: Yes
***ser
MOSFETs- Power and Small Signal 100V 123A N-Channel No-Cancel/No-Return
***ponent Stockers USA
123 A 100 V 0.01 ohm N-CHANNEL Si POWER MOSFET TO-264AA
***r Electronics
Power Field-Effect Transistor, 123A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFK44N60
DISTI # V36:1790_15876404		IXYS CorporationTrans MOSFET N-CH Si 600V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		0
  • 25000:$11.2500
  • 12500:$11.2600
  • 2500:$13.8000
  • 250:$20.0800
  • 25:$21.2500
IXFK44N60
DISTI # IXFK44N60-ND		IXYS CorporationMOSFET N-CH 600V 44A TO-264AA
RoHS: Compliant
Min Qty: 1
Container: Tube		115In Stock
  • 500:$14.0070
  • 100:$16.4220
  • 25:$17.8712
  • 10:$19.3200
  • 1:$21.2500
IXFK44N60
DISTI # 747-IXFK44N60		IXYS CorporationMOSFET DIODE Id44 BVdass600
RoHS: Compliant		175
  • 1:$24.4400
  • 10:$22.2200
  • 25:$20.5500
  • 50:$18.9100
  • 100:$18.4400
  • 250:$16.9100
  • 500:$15.3400
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Availability
Stock:
136
On Order:
2119
Enter Quantity:
Current price of IXFK44N60 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$24.44
$24.44
10
$22.22
$222.20
25
$20.55
$513.75
50
$18.91
$945.50
100
$18.44
$1 844.00
250
$16.91
$4 227.50
500
$15.34
$7 670.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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