NIMD6001ANR2G

Mfr. #:: NIMD6001ANR2G
Manufacturer:: ON Semiconductor
Description:: RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
Lifecycle:: New from this manufacturer.
Datasheet:: NIMD6001ANR2G Datasheet
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HTML Datasheet:: NIMD6001ANR2G Datasheet NIMD6001ANR2G Datasheet (P4-P6)NIMD6001ANR2G Datasheet (P7-P9)
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Product Attribute
Attribute Value

Manufacturer: ON Semiconductor

Product Category: PMIC - Power Distribution Switches, Load Drivers

Series: NIMD6001A

Packaging: Tape & Reel (TR)

Unit-Weight: 0.019048 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Input-Type: -

Operating-Temperature: -55°C ~ 150°C (TJ)

Output-Type: N-Channel

Features: -

Number-of-Channels: 2 Channel

Interface: On/Off

Supplier-Device-Package: 8-SOIC

Ratio-Input:Output: 1899/12/30 1:01:00

Configuration: Dual

Number-of-Outputs: 2

Voltage-Supply-Vcc-Vdd: Not Required

Fault-Protection: -

Output-Configuration: Low Side

Rds-On-Typ: 60 mOhm

Voltage-Load: 60V (Max)

Current-Output-Max: 3.3A

Switch-Type: Relay, Solenoid Driver

Transistor-Type: 2 N-Channel

Id-Continuous-Drain-Current: 3.3 A

Vds-Drain-Source-Breakdown-Voltage: 67 V

Rds-On-Drain-Source-Resistance: 110 mOhms

Transistor-Polarity: N-Channel

Tags: NIMD6001A, NIMD60, NIMD6, NIMD, NIM

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NIMD6001ANR2G Description

***et: Transistor MOSFET Array Dual N-CH 60V 3.3A 8-Pin SOIC T/R

***emi: Dual N-Channel MOSFET Driver with Diagnostic Output

***enic: IC PWR DRIVER N-CHAN 1:1 8SOIC

***or: BUFFER/INVERTER PERIPHL DRIVER

***(Formerly Allied Electronics): IRF7342PBF Dual P-channel MOSFET Transistor; 3.4 A; 55 V; 8-Pin SOIC

***itex: Transistor: 2xP-MOSFET; unipolar; -55V; -3.4A; 0.105ohm; 2W; -55+150 deg.C; SMD; SO8

***et Europe: Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC Tube

***ure Electronics: Dual P-Channel 55 V 0.105 Ohm 26 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET 2xP-Ch. 3,4A/55V SO8 IRF 7342 TRPBF

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V

***roFlash: Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF

***ineon SCT: 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***th Star Micro: Transistor MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R

***ure Electronics: Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8

***enic: 30V 4.1A 1.3W 42m´Î@10V5.7A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W

***(Formerly Allied Electronics): NTMD4N03R2G Dual N-channel MOSFET Transistor; 4 A; 30 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 48 mOhm 2 W Surface Mount Power MOSFET - SOIC-8

***emi: Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8

***nell: MOSFET, DUAL N-CH, 30V, 4A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8

***ark: MOSFET, COMP, H-BRIDE, 30V, SO8; Channel Type:Complementary N and P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.98A; No. of Pins:8Pins RoHS Compliant: Yes

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N and 2 P-Channel (H-Bridge) Logic Level Gate -55°C~150°C TJ 33m Ω @ 5A, 10V 3V @ 250μA MOSFET 2N/2P-CH 30V 8-SOIC

***nell: MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.98A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 870mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 5A; Continuous Drain Current Id, P Channel: -4.1A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Half Bridge; On Resistance Rds(on), N Channel: 0.033ohm; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Market price

Part #	Mfg.	Description	Stock	Price
NIMD6001ANR2G DISTI # NIMD6001ANR2G-ND	ON Semiconductor	IC MOSFET DVR 60V 3.3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NIMD6001ANR2G DISTI # NIMD6001ANR2G	ON Semiconductor	Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001ANR2G) Min Qty: 447 Container: Bulk	Americas - 0	4470:$0.6909 2235:$0.7079 1341:$0.7169 894:$0.7269 447:$0.7319
NIMD6001ANR2G	ON Semiconductor	Buffer/Inverter Based Peripheral Driver RoHS: Compliant	14	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100

Image	Part #	Description
	Mfr.#: NIMD6001ANR2G OMO.#: OMO-NIMD6001ANR2G-ON-SEMICONDUCTOR	RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
	Mfr.#: NIMD6001A OMO.#: OMO-NIMD6001A-1190	New and Original
	Mfr.#: NIMD6001AR2G OMO.#: OMO-NIMD6001AR2G-1190	New and Original
	Mfr.#: NIMD6001N OMO.#: OMO-NIMD6001N-1190	New and Original
	Mfr.#: NIMD6001NR2G OMO.#: OMO-NIMD6001NR2G-1190	Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001NR2G)

NIMD6001ANR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes