RJH60F6DPK-00#T0

Mfr. #:: RJH60F6DPK-00#T0
Manufacturer:: Renesas Electronics
Description:: IGBT Transistors IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: RJH60F6DPK-00#T0 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Renesas Electronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tube

Brand:: Renesas Electronics

Moisture Sensitive:: Yes

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Tags: RJH60F6DPK, RJH60F6D, RJH60F6, RJH60F, RJH60, RJH6, RJH

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH60F6DPK-00#T0 Description

***et: Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube

***i-Key: IGBT 600V 85A 297.6W TO-3P

*** Electronic Components: IGBT Transistors IGBT

***ical: Trans IGBT Chip N-CH 600V 178A 540000mW 3-Pin(3+Tab) PLUS 247

***el Electronic: IC QUAD DIFF COMPARATOR 14-TSSOP

***aconductors: Insulated Gate Bipolar Transistors

***ure Electronics: IXGX72N60C3H1 Series 600 V 75 A Through Hole High-Speed PT IGBT - PLUS247

***i-Key: IGBT 600V 75A 540W PLUS247

***et: Trans IGBT Chip N-CH 600V 85A 3-Pin TO-247A Tube

***i-Key: IGBT 600V 85A 297.6W TO-247A

*** Electronic Components: IGBT Transistors IGBT

***ernational Rectifier: 600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications

***p One Stop: Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W

***ark: Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 80A 428000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW75N60T Series 600 V 75 A Through Hole TRENCHSTOP IGBT - PG-TO247-3

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ment14 APAC: IGBT, N, 600V, 75A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:75A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:428W; Power Dissipation Pd:428W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 75 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 428 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V CEsat drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V CEsat; Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability

***p One Stop: Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3

***Parts: IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

Image	Part #	Description
	Mfr.#: RJH60F6DPQ-A0#T0 OMO.#: OMO-RJH60F6DPQ-A0-T0	IGBT Transistors IGBT
	Mfr.#: RJH60F6DPK-00#T0 OMO.#: OMO-RJH60F6DPK-00-T0	IGBT Transistors IGBT
	Mfr.#: RJH60F6DPK OMO.#: OMO-RJH60F6DPK-1190	New and Original
	Mfr.#: RJH60F6DPK-AO OMO.#: OMO-RJH60F6DPK-AO-1190	New and Original
	Mfr.#: RJH60F6DPQ OMO.#: OMO-RJH60F6DPQ-1190	New and Original

RJH60F6DPK-00#T0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes