NGTB35N60FL2WG

Mfr. #:: NGTB35N60FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 600V/35A FAST IGBT FSII T
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB35N60FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB35N60FL2WG Datasheet NGTB35N60FL2WG Datasheet (P4-P6)NGTB35N60FL2WG Datasheet (P7-P8)
ECAD Model:
More Information:: NGTB35N60FL2WG more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 70 A

Pd - Power Dissipation:: 300 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 70 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 1.340411 oz

Tags: NGTB35, NGTB3, NGTB, NGT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB35N60FL2WG Description

***ical: Trans IGBT Chip N-CH 600V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***ied Electronics & Automation: NGTB35N60FL2WG; IGBT Transistor; 70 A 600 V; 1MHz; 3-Pin TO-247

***nell: 600V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

NGTB35N60FL2WG More Information

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
NGTB35N60FL2WG DISTI # V99:2348_07286008	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	28	500:$2.4110 250:$2.6690 100:$2.8160 10:$3.1950 1:$4.0403
NGTB35N60FL2WG DISTI # NGTB35N60FL2WGOS-ND	ON Semiconductor	IGBT 600V 70A 300W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2520:$2.2147 510:$2.7572 120:$3.2389 30:$3.7373 10:$3.9530 1:$4.4000
NGTB35N60FL2WG DISTI # 25862784	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	28	500:$2.5918 250:$2.8692 100:$3.0272 10:$3.4346 3:$3.9485
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N60FL2WG) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 10	300:$1.9530 150:$2.0024 90:$2.0281 60:$2.0544 30:$2.0678
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube (Alt: NGTB35N60FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.7900 100:€1.9900 500:€1.9900 50:€2.0900 25:€2.1900 10:€2.2900 1:€2.4900
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N60FL2WG) Min Qty: 143 Container: Bulk	Americas - 0	1430:$2.0900 286:$2.1900 429:$2.1900 715:$2.1900 143:$2.2900
NGTB35N60FL2WG. DISTI # 29AC8927	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	300:$1.9800 150:$2.0400 62:$2.0600 32:$2.0900 1:$2.1000
NGTB35N60FL2WG DISTI # 70600202	ON Semiconductor	NGTB35N60FL2WG,IGBT Transistor,70 A 600 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$2.9900 10:$2.8400 20:$2.7000 50:$2.5600 100:$2.4300
NGTB35N60FL2WG DISTI # 863-NGTB35N60FL2WG	ON Semiconductor	IGBT Transistors 600V/35A FAST IGBT FSII T RoHS: Compliant	28	1:$4.1800 10:$3.5500 100:$3.0800 250:$2.9200 500:$2.6200
NGTB35N60FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	3510	1000:$2.3200 500:$2.4400 100:$2.5400 25:$2.6500 1:$2.8500
NGTB35N60FL2WG DISTI # 8427894P	ON Semiconductor	IGBT FIELD STOP II 600V 35A DIODE TO247, TU	32	100:£1.6350 50:£1.8100 20:£1.8500 10:£1.8900
NGTB35N60FL2WG DISTI # 2452036	ON Semiconductor	600V/35A FAST IGBT FSII T RoHS: Compliant	0	500:$4.0300 250:$4.4900 100:$4.7400 10:$5.4600 1:$6.4300
NGTB35N60FL2WG DISTI # 2452036	ON Semiconductor	600V/35A FAST IGBT FSII T RoHS: Compliant	0	500:£2.0100 250:£2.2400 100:£2.3600 10:£2.7200 1:£3.5800

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Availability

Stock:: 598
On Order:: 2581
Enter Quantity:

Current price of NGTB35N60FL2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$4.18~~; ~~$4.18~~

10: ~~$3.55~~; ~~$35.50~~

100: ~~$3.08~~; ~~$308.00~~

250: ~~$2.92~~; ~~$730.00~~

500: ~~$2.62~~; ~~$1 310.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

NGTB35 4
NGTB3 21
NGTB 131
NGT 181

NGTB35N60FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes