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IRL610A

IRL610A
Mfr. #:
IRL610A
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 200V N-Channel a-FET Logic Level
Lifecycle:
New from this manufacturer.
Datasheet:
IRL610A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL610A DatasheetIRL610A Datasheet (P4-P6)IRL610A Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
3.3 A
Rds On - Drain-Source Resistance:
1.5 Ohms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
33 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
1.9 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
9 ns
Unit Weight:
0.090478 oz
Tags
IRL61, IRL6, IRL
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 200V 3.3A TO-220
***ser
MOSFETs 200V N-Channel a-FET Logic Level
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.3A; On-Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220; Leaded Process Compatible:Yes RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IRL610A
DISTI # IRL610A-ND		ON SemiconductorMOSFET N-CH 200V 3.3A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    IRL610AFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		1744
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    IRL610A
    DISTI # 512-IRL610A    		ON SemiconductorMOSFET 200V N-Channel a-FET Logic Level
    RoHS: Compliant    		0
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      IRLI540G

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      OMO.#: OMO-IRLI540G

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      Mfr.#: IRLI640GPB,IRLI640G

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      		 New and Original
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      IRLR7843PBF

      Mfr.#: IRLR7843PBF

      OMO.#: OMO-IRLR7843PBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRLU7833

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      IRLU014NPBF

      Mfr.#: IRLU014NPBF

      OMO.#: OMO-IRLU014NPBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRLZ44NSPBF

      OMO.#: OMO-IRLZ44NSPBF-INFINEON-TECHNOLOGIES

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      Availability
      Stock:
      Available
      On Order:
      3000
      Enter Quantity:
      Current price of IRL610A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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