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APT15GT60BRDQ1G

APT15GT60BRDQ1G
Mfr. #:
APT15GT60BRDQ1G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Datasheet:
APT15GT60BRDQ1G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT15GT60BRDQ1G DatasheetAPT15GT60BRDQ1G Datasheet (P4-P6)APT15GT60BRDQ1G Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
Microchip / Microsemi
Product Type:
IGBT Transistors
Factory Pack Quantity:
1
Subcategory:
IGBTs
Tags
APT15GT60B, APT15GT6, APT15GT, APT15G, APT15, APT1, APT
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 42A 184000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***ure Electronics
IKW20N60H3 Series 600 V 40 A Third Generation High Speed Switching - TO-247-3
***ineon SCT
High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ment14 APAC
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Transistor Case Style:TO-247; No. of Pins:3; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:170W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP™ IGBT -PG-TO247-3
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
***ark
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail
***nell
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***rchild Semiconductor
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***ical
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail
***ure Electronics
FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
*** Source Electronics
High current capability, High input impedance | IGBT 600V 40A 165W TO247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail
***eco
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
***rchild Semiconductor
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Part # Mfg. Description Stock Price
APT15GT60BRDQ1G
DISTI # 18890750		Microsemi CorporationTrans IGBT Chip N-CH 600V 42A 3-Pin(3+Tab) TO-247
RoHS: Compliant		2400
  • 2500:$2.7522
  • 1000:$2.8908
  • 500:$3.4353
  • 250:$3.8214
  • 100:$4.2372
  • 30:$4.6530
APT15GT60BRDQ1G
DISTI # APT15GT60BRDQ1G-ND		Microsemi CorporationIGBT 600V 42A 184W TO247
RoHS: Compliant
Min Qty: 120
Container: Tube		Temporarily Out of Stock
  • 120:$4.5887
APT15GT60BRDQ1G
DISTI # APT15GT60BRDQ1G		Microchip Technology IncThunderbolt IGBT N-Channel 600V 42A 3-Pin TO-247 - Rail/Tube (Alt: APT15GT60BRDQ1G)
RoHS: Compliant
Min Qty: 120
Container: Tube		Americas - 0
  • 600:$2.5900
  • 1200:$2.5900
  • 360:$2.6900
  • 240:$2.7900
  • 120:$2.8900
APT15GT60BRDQ1G
DISTI # 494-APT15GT60BRDQ1G		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
RoHS: Compliant		154
  • 1:$5.5800
  • 10:$4.7000
  • 100:$4.2800
  • 250:$3.8600
  • 500:$3.4700
  • 1000:$2.9200
  • 2500:$2.7800
APT15GT60BRDQ1G
DISTI # APT15GT60BRDQ1G		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 120:$2.7900
  • 500:$2.7300
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Availability
Stock:
154
On Order:
2137
Enter Quantity:
Current price of APT15GT60BRDQ1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.58
$5.58
10
$4.70
$47.00
100
$4.28
$428.00
250
$3.86
$965.00
500
$3.47
$1 735.00
1000
$2.92
$2 920.00
2500
$2.78
$6 950.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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