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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| FMR23N50ES DISTI # FE0000000001050 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR23N50ESSC DISTI # FE0000000004657 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Image | Part # | Description |
|---|---|---|
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Mfr.#: FMR23N50E OMO.#: OMO-FMR23N50E-1190 |
Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR23N50ES OMO.#: OMO-FMR23N50ES-1190 |
Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR23N57E OMO.#: OMO-FMR23N57E-1190 |
New and Original |
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Mfr.#: FMR23N57E,23N57E OMO.#: OMO-FMR23N57E-23N57E-1190 |
New and Original |
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Mfr.#: FMR23N60E OMO.#: OMO-FMR23N60E-1190 |
Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR23N60ES OMO.#: OMO-FMR23N60ES-1190 |
Power Field-Effect Transistor, 23A I(D),600V,0.28ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |