IRGB4059DPBF

Mfr. #:: IRGB4059DPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V UltraFast Trench IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: IRGB4059DPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRGB4059DPBF Datasheet IRGB4059DPBF Datasheet (P4-P6)IRGB4059DPBF Datasheet (P7-P9)IRGB4059DPBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: IGBTs - Single

Series: -

Packaging: Tube

Unit-Weight: 0.211644 oz

Mounting-Style: Through Hole

Package-Case: TO-220-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-220AB

Configuration: Single

Power-Max: 56W

Reverse-Recovery-Time-trr: 55ns

Current-Collector-Ic-Max: 8A

Voltage-Collector-Emitter-Breakdown-Max: 600V

IGBT-Type: Trench

Current-Collector-Pulsed-Icm: 16A

Vce-on-Max-Vge-Ic: 2.05V @ 15V, 4A

Switching-Energy: 35μJ (on), 75μJ (off)

Gate-Charge: 9nC

Td-on-off-25°C: 25ns/65ns

Test-Condition: 400V, 4A, 100 Ohm, 15V

Pd-Power-Dissipation: 56 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 600 V

Collector-Emitter-Saturation-Voltage: 2.05 V

Continuous-Collector-Current-at-25-C: 8 A

Maximum-Gate-Emitter-Voltage: +/- 20 V

Continuous-Collector-Current-Ic-Max: 8 A

Tags: IRGB4059, IRGB405, IRGB40, IRGB4, IRGB, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGB4059DPBF Description

***ical: Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube

***ernational Rectifier: 600V UltraFast Copack Trench IGBT in a TO-220AB package

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V

*** Electronic Components: Motor / Motion / Ignition Controllers & Drivers Dis Short Circuit Rated IGBT

***Yang: IGBT 600V 8A 60W TO220 - Bulk

***th Star Micro: IGBT W/DIODE 600V 5A

***el Electronic: RES SMD 332 OHM 1% 1/16W 0402

***i-Key Marketplace: N-CHANNEL IGBT

***et: IGBT 600V 8A 35W TO220F

***i-Key: IGBT SHORT CIRC 600V 5A TO-220F

***i-Key Marketplace: IGBT, 8A, 600V, N-CHANNEL

***el Electronic: RES 4.7K OHM 1% 1/16W 0402

***ser: IGBTs 600V/5A/w/FRD

***ical: Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP

***el Electronic: In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***(Formerly Allied Electronics): STGF10NC60KD,IGBT N-ch 600V 10A TO220FP

***ark: IGBT, 600V, 9A, 150DEG C, 25W; Continuous Collector Current:9A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 20W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating

*** Electronic Components: Motor / Motion / Ignition Controllers & Drivers Dis High Perf IGBT

***Yang: IGBT 600V 6A 30W TO220 - Bulk

***inecomponents.com: Discrete, High Performance IGBT with Diode

***ser: IGBTs Dis,High Perf IGBT

***i-Key Marketplace: N-CHANNEL IGBT

***p One Stop Global: Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 10 A, 600 V, fast IGBT with Ultrafast diode

Market price

Part #	Mfg.	Description	Stock	Price
IRGB4059DPBF DISTI # 19273322	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube	167	42:$1.5000
IRGB4059DPBF DISTI # IRGB4059DPBF-ND	Infineon Technologies AG	IGBT 600V 8A 56W TO220AB RoHS: Compliant Min Qty: 250 Container: Tube	Limited Supply - Call
IRGB4059DPBF DISTI # IRGB4059DPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRGB4059DPBF) Min Qty: 288 Container: Bulk	Americas - 0	864:$1.0900 1440:$1.0900 2880:$1.0900 288:$1.1900 576:$1.1900
IRGB4059DPBF DISTI # 88K4671	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 88K4671) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IRGB4059DPBF DISTI # 88K4671	Infineon Technologies AG	SINGLE IGBT, 600V,DC Collector Current:8A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:56W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes	167	1:$1.2000 10:$1.2000 25:$1.2000 50:$1.2000 100:$1.2000 250:$1.2000 500:$1.2000
IRGB4059DPBF DISTI # 942-IRGB4059DPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast Trench IGBT RoHS: Compliant	0
IRGB4059DPBF	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	420	1000:$1.1500 500:$1.2100 100:$1.2600 25:$1.3100 1:$1.4100
IRGB4059DPBF	International Rectifier	Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	600	1000:$1.1500 500:$1.2100 100:$1.2600 25:$1.3100 1:$1.4100
IRGB4059DPBF	International Rectifier		236
IRGB4059DPBF	International Rectifier	* FREE SHIPPING ORDERS OVER $100 *	363	196:$1.4208 90:$1.5360 1:$3.0720
IRGB4059DPBF. DISTI # 2133356	Infineon Technologies AG	SINGLE IGBT, 600V RoHS: Compliant	167	1:$3.1400
IRGB4059DPBF. DISTI # 2133356	Infineon Technologies AG	SINGLE IGBT, 600V RoHS: Compliant	167	100:£1.5300 50:£1.7700 25:£1.8900 10:£2.1600 1:£2.4800
IRGB4059DPBF	International Rectifier	RoHS: Compliant	Europe - 250

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Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of IRGB4059DPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.64~~; ~~$1.64~~

10: ~~$1.55~~; ~~$15.53~~

100: ~~$1.47~~; ~~$147.15~~

500: ~~$1.39~~; ~~$694.90~~

1000: ~~$1.31~~; ~~$1 308.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRGB4059DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes