PartNumber | IRGB14C40LPBF | IRGB10B60KDPBF | IRGB15B60KDPBF |
Description | IGBT Transistors 430V LO-VCEON DISCRETE IGBT | IGBT Transistors 600V UltraFast 10-30kHz | IGBT Transistors 600V UltraFast 10-30kHz |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 430 V | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.4 V | 1.8 V | 2.2 V |
Maximum Gate Emitter Voltage | 10 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 20 A | 35 A | 31 A |
Pd Power Dissipation | 125 W | 156 W | 139 W |
Minimum Operating Temperature | - 40 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 20 A | 35 A | - |
Height | 8.77 mm | 8.77 mm | 8.77 mm |
Length | 10.54 mm | 10.54 mm | 10.54 mm |
Width | 4.69 mm | 4.69 mm | 4.69 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | SP001547952 | SP001542270 | SP001540650 |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Gate Emitter Leakage Current | - | 100 nA | - |