2N7002PSZ

Product Attribute

Attribute Value

Manufacturer:

Nexperia

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

320 mA

Rds On - Drain-Source Resistance:

1.6 Ohms

Vgs th - Gate-Source Threshold Voltage:

1.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

0.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

420 mW

Configuration:

Dual

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Brand:

Nexperia

Forward Transconductance - Min:

400 mS

Fall Time:

5 ns

Product Type:

MOSFET

Rise Time:

4 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

10 ns

Typical Turn-On Delay Time:

3 ns

Tags

2N7002PS, 2N7002P, 2N7002, 2N700, 2N70, 2N7