GA35XCP12-247

Product Attribute

Attribute Value

Manufacturer:

GeneSiC Semiconductor

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

SiC

Package / Case:

TO-247AB

Mounting Style:

Through Hole

Collector- Emitter Voltage VCEO Max:

1200 V

Collector-Emitter Saturation Voltage:

3 V

Maximum Gate Emitter Voltage:

20 V

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Series:

GA35XCP12

Packaging:

Tube

Operating Temperature Range:

- 40 C to + 150 C

Brand:

GeneSiC Semiconductor

Gate-Emitter Leakage Current:

0.3 mA

Product Type:

IGBT Transistors

Factory Pack Quantity:

30

Subcategory:

IGBTs

Tags

GA35, GA3