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DMT6018LDR-13

DMT6018LDR-13
Mfr. #:
DMT6018LDR-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 41V-60V
Lifecycle:
New from this manufacturer.
Datasheet:
DMT6018LDR-13 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
DMT6018LDR-13 more Information
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
Technology:
Si
Package / Case:
V-DFN3030-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel, NPN
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
8.8 A
Rds On - Drain-Source Resistance:
13 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
13.9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.9 W
Configuration:
Dual
Channel Mode:
Enhancement
Transistor Type:
2 N-Channel
Brand:
Diodes Incorporated
Fall Time:
3.5 ns
Product Type:
MOSFET
Rise Time:
4.6 ns
Factory Pack Quantity:
10000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10.8 ns
Typical Turn-On Delay Time:
3.5 ns
Tags
DMT601, DMT60, DMT6, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Mosfet Array 2 N-Channel (Dual) 60V 8.8A (Ta) 1.9W Surface Mount V-DFN3030-8
***et
N-Channel Enhancement Mode MOSFET Dual 60V 8.8A 8-Pin V-DFN3030 T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***i-Key
MOSFET 2 N-CH 60V 11.4A DFN3030
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
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Availability
Stock:
Available
On Order:
1992
Enter Quantity:
Current price of DMT6018LDR-13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.86
$0.86
10
$0.72
$7.19
100
$0.46
$46.40
1000
$0.37
$371.00
2500
$0.33
$830.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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