APTGV50H60T3G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Modules

RoHS:

Y

Product:

IGBT Silicon Modules

Configuration:

Full Bridge

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

1.5 V, 2 V

Continuous Collector Current at 25 C:

80 A, 65 A

Gate-Emitter Leakage Current:

600 nA, 400 nA

Pd - Power Dissipation:

176 W, 250 W

Package / Case:

SP3-32

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 100 C

Brand:

Microchip / Microsemi

Mounting Style:

Chassis Mount

Maximum Gate Emitter Voltage:

20 V

Product Type:

IGBT Modules

Factory Pack Quantity:

50

Subcategory:

IGBTs

Tags

APTGV5, APTGV, APTG, APT