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TH58NVG3S0HBAI4

TH58NVG3S0HBAI4
Mfr. #:
TH58NVG3S0HBAI4
Manufacturer:
Toshiba Memory
Description:
NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
Lifecycle:
New from this manufacturer.
Datasheet:
TH58NVG3S0HBAI4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TH58NVG3S0HBAI4 more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
NAND Flash
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
FBGA-63
Memory Size:
8 Gbit
Interface Type:
Parallel
Organization:
1 G x 8
Timing Type:
Synchronous
Data Bus Width:
8 bit
Supply Voltage - Min:
2.7 V
Supply Voltage - Max:
3.6 V
Supply Current - Max:
30 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Packaging:
Tray
Memory Type:
NAND
Product:
NAND Flash
Speed:
25 ns
Brand:
Toshiba Memory
Moisture Sensitive:
Yes
Product Type:
NAND Flash
Factory Pack Quantity:
210
Subcategory:
Memory & Data Storage
Tags
TH58NVG3S0HB, TH58NVG3S0H, TH58NVG3S, TH58NVG3, TH58NVG, TH58NV, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
NAND Flash Serial 3.3V 8G-bit 1G x 8 63-Pin FBGA
***et
8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V
***i-Key
8GB SLC NAND 24NM BGA 9X11 3.3V
TH58NVG Series 16GB CMOS NAND EEPROM
Toshiba TH58NVG Series 16GB CMOS Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) offers 3.3V and is organized as (4096+256) bytes x 64 pages x 8192 blocks. Program and read data is transferred between the register and the memory cell array in 4352-byte increments, granted through two 4352-byte static registers. I/O pins are utilized for both address and data input/output including command inputs through the TH58NVG Series serial type memory. Applications include image file memory for still cameras, solid-state file storage and voice recording.Learn More
Part # Mfg. Description Stock Price
TH58NVG3S0HBAI4
DISTI # TH58NVG3S0HBAI4-ND		Toshiba Semiconductor and Storage Products8GB SLC NAND 24NM BGA 9X11 3.3V
RoHS: Compliant
Min Qty: 210
Container: Tray		Temporarily Out of Stock
  • 210:$8.9725
TH58NVG3S0HBAI4
DISTI # TH58NVG3S0HBAI4		Toshiba America Electronic Components8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V - Trays (Alt: TH58NVG3S0HBAI4)
RoHS: Compliant
Min Qty: 210
Container: Tray		Americas - 0
  • 210:$7.4900
  • 420:$7.3900
  • 840:$7.2900
  • 1260:$7.1900
  • 2100:$6.9900
TH58NVG3S0HBAI4
DISTI # 757-TH58NVG3S0HBAI4		Toshiba America Electronic ComponentsNAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant		175
  • 1:$12.1300
  • 10:$10.9200
  • 25:$9.9500
  • 100:$8.9800
  • 250:$8.2500
  • 500:$7.5200
  • 1000:$6.5500
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Mfr.#: AT24C04D-STUM-T

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Availability
Stock:
165
On Order:
2148
Enter Quantity:
Current price of TH58NVG3S0HBAI4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.60
$8.60
10
$7.92
$79.20
25
$7.75
$193.75
50
$7.72
$386.00
100
$6.93
$693.00
250
$6.72
$1 680.00
500
$6.39
$3 195.00
1000
$6.17
$6 170.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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