TH58NVG3S

TH58NVG3S0HBAI4 vs TH58NVG3S0HTA00 vs TH58NVG3S0HBAI6

 
PartNumberTH58NVG3S0HBAI4TH58NVG3S0HTA00TH58NVG3S0HBAI6
DescriptionNAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
ManufacturerToshibaToshibaToshiba
Product CategoryNAND FlashNAND FlashNAND Flash
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-63TSOP-48VFBGA-67
Memory Size8 Gbit8 Gbit8 Gbit
Interface TypeParallelParallelParallel
Organization1 G x 81 G x 81 G x 8
Timing TypeSynchronous-Synchronous
Data Bus Width8 bit8 bit8 bit
Supply Voltage Min2.7 V2.7 V2.7 V
Supply Voltage Max3.6 V3.6 V3.6 V
Supply Current Max30 mA30 mA30 mA
Minimum Operating Temperature- 40 C0 C- 40 C
Maximum Operating Temperature+ 85 C+ 70 C+ 85 C
PackagingTrayTrayTray
Memory TypeNANDNANDNAND
ProductNAND Flash--
Speed25 ns--
BrandToshiba MemoryToshiba MemoryToshiba Memory
Moisture SensitiveYesYesYes
Product TypeNAND FlashNAND FlashNAND Flash
Factory Pack Quantity21096210
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Maximum Clock Frequency---
Manufacturer Part # Description RFQ
Toshiba Memory
Toshiba Memory
TH58NVG3S0HBAI4 NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
TH58NVG3S0HTAI0 NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
TH58NVG3S0HTA00 NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
TH58NVG3S0HBAI6 NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
TH58NVG3S0HTAI0 EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM
TH58NVG3S0HTA00 EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM
TH58NVG3S0HBAI4 Flash Memory 3.3V 8Gbit NAND EEPROM
TH58NVG3S0FTA00 New and Original
TH58NVG3S0FTAI0 New and Original
TH58NVG3S0HBAI6 8GB SLC NAND 24NM BGA 6.5X8 3.3V
TH58NVG3S0HTA00B4H New and Original
TH58NVG3S0HTA00_TRAY New and Original
TH58NVG3S0HTAI0_TRAY NAND Flash Memory (Alt: TH58NVG3S0HTAI0_TRAY)
TH58NVG3S0HBAI4-ND New and Original
TH58NVG3S0HBAI6-ND New and Original
TH58NVG3S0HTA00-ND New and Original
TH58NVG3S0HTAI0-ND New and Original
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