TH58NVG3S0HTAI0

TH58NVG3S0HTAI0
Mfr. #:
TH58NVG3S0HTAI0
Manufacturer:
Toshiba Memory
Description:
EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM
Lifecycle:
New from this manufacturer.
Datasheet:
TH58NVG3S0HTAI0 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TH58NVG3S0HTAI0 more Information
Product Attribute
Attribute Value
Manufacturer
TOSHIBA
Product Category
Memory
Series
-
Packaging
Tray
Package-Case
48-TFSOP (0.724", 18.40mm Width)
Operating-Temperature
-40°C ~ 85°C (TA)
Interface
Parallel/Serial
Voltage-Supply
2.7 V ~ 3.6 V
Supplier-Device-Package
48-TSOP I
Memory-Size
8G (1G x 8)
Memory-Type
EEPROM - NAND
Speed
25ns
Format-Memory
EEPROM - Serial I/O Data Bus
Tags
TH58NVG3S0HTAI, TH58NVG3S0HT, TH58NVG3S0H, TH58NVG3S, TH58NVG3, TH58NVG, TH58NV, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***n
    C***n
    ES

    Well, it's nothing critical, but i expected it more. Util

    2019-04-10
    S***a
    S***a
    TR

    Long delivery time

    2019-09-16
    T***t
    T***t
    BY

    The goods came promptly. The board is slightly deformed, but the performance does not affect

    2019-06-10
    E**c
    E**c
    DE

    ok

    2019-05-06
***ical
NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
***ronik
NAND-Flash 1Gx8 3.3V TSOP48
***i-Key
IC EEPROM 8GBIT 25NS 48TSOP
***et
8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V
TH58NVG Series 16GB CMOS NAND EEPROM
Toshiba TH58NVG Series 16GB CMOS Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) offers 3.3V and is organized as (4096+256) bytes x 64 pages x 8192 blocks. Program and read data is transferred between the register and the memory cell array in 4352-byte increments, granted through two 4352-byte static registers. I/O pins are utilized for both address and data input/output including command inputs through the TH58NVG Series serial type memory. Applications include image file memory for still cameras, solid-state file storage and voice recording.Learn More
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Part # Mfg. Description Stock Price
TH58NVG3S0HTAI0
DISTI # TH58NVG3S0HTAI0-ND
Toshiba Semiconductor and Storage ProductsIC FLASH 8G PARALLEL 48TSOP I
RoHS: Compliant
Min Qty: 1
Container: Tray
190In Stock
  • 1056:$6.8749
  • 576:$7.1244
  • 288:$7.4911
  • 192:$7.7253
  • 96:$8.6115
  • 25:$8.6420
  • 10:$8.8250
  • 1:$9.5900
TH58NVG3S0HTAI0
DISTI # TH58NVG3S0HTAI0
Toshiba America Electronic Components8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V - Trays (Alt: TH58NVG3S0HTAI0)
RoHS: Compliant
Min Qty: 96
Container: Tray
Americas - 0
  • 96:$7.4900
  • 192:$7.3900
  • 384:$7.2900
  • 576:$7.1900
  • 960:$6.9900
TH58NVG3S0HTAI0
DISTI # TH58NVG3S0HTAI0
Toshiba America Electronic Components8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V (Alt: TH58NVG3S0HTAI0)
RoHS: Compliant
Min Qty: 480
Asia - 0
  • 480:$30.9091
  • 960:$27.8688
  • 1440:$25.3731
  • 2400:$23.2877
  • 4800:$22.3684
  • 12000:$21.7949
  • 24000:$21.2500
TH58NVG3S0HTAI0
DISTI # 757-TH58NVG3S0HTAI0
Toshiba America Electronic ComponentsNAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant
188
  • 1:$9.1400
  • 10:$8.4100
  • 50:$8.2100
  • 100:$7.3600
  • 250:$7.1100
  • 500:$6.7900
  • 1000:$6.5500
TH58NVG3S0HTAI0_TRAY
DISTI # XSKDRABV0028643
Toshiba America Electronic Components 
RoHS: Compliant
138
  • 96:$9.4300
  • 138:$8.8000
Image Part # Description
TH58NVG2S3HTA00

Mfr.#: TH58NVG2S3HTA00

OMO.#: OMO-TH58NVG2S3HTA00

NAND Flash 4Gb 24nm SLC NAND (EEPROM)
TH58NVG2S3HBAI6

Mfr.#: TH58NVG2S3HBAI6

OMO.#: OMO-TH58NVG2S3HBAI6

NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
TH58NVG2S3HTAI0

Mfr.#: TH58NVG2S3HTAI0

OMO.#: OMO-TH58NVG2S3HTAI0-TOSHIBA-MEMORY-AMERICA

EEPROM 4 Gbit CMOS NAND EEPROM
TH58NVG4D4CTG00

Mfr.#: TH58NVG4D4CTG00

OMO.#: OMO-TH58NVG4D4CTG00-1190

New and Original
TH58NVG5H0ETAK0

Mfr.#: TH58NVG5H0ETAK0

OMO.#: OMO-TH58NVG5H0ETAK0-1190

32 GBIT (4G 8 BIT) CMOS NAND E2PROM - Rail/Tube (Alt: TH58NVG5H0ETAK0)
TH58NVG5S0FTAKO

Mfr.#: TH58NVG5S0FTAKO

OMO.#: OMO-TH58NVG5S0FTAKO-1190

New and Original
TH58NVG5T2ETA20

Mfr.#: TH58NVG5T2ETA20

OMO.#: OMO-TH58NVG5T2ETA20-1190

New and Original
TH58NVG6D2FLA49

Mfr.#: TH58NVG6D2FLA49

OMO.#: OMO-TH58NVG6D2FLA49-1190

New and Original
TH58NVG2S3HBAI4

Mfr.#: TH58NVG2S3HBAI4

OMO.#: OMO-TH58NVG2S3HBAI4-TOSHIBA-MEMORY-AMERICA

SLC NAND Flash 3.3V 4G-bit
TH58NVG2S3HBAI4-ND

Mfr.#: TH58NVG2S3HBAI4-ND

OMO.#: OMO-TH58NVG2S3HBAI4-ND-1190

New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of TH58NVG3S0HTAI0 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$7.78
$7.78
10
$7.40
$73.96
100
$7.01
$700.65
500
$6.62
$3 308.65
1000
$6.23
$6 228.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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