SPU04N60C3XK

Mfr. #:: SPU04N60C3XK
Manufacturer:: Infineon Technologies AG
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: SPU04N60C3XK Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
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Tags: SPU04N60C3, SPU04N60C, SPU04N6, SPU04N, SPU04, SPU0, SPU

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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Step3:
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SPU04N60C3XK Description

***et: Trans MOSFET N-CH 600V 4.5A 3-Pin (3+Tab) TO-251 Tube

***el Electronic: Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 200V 5.2A 3-Pin (3+Tab) TO-220AB

***enic: 200V 5.2A 50W 800m´Î@10V3.1A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ark: N CHANNEL MOSFET, 200V, 5.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: No

***nell: MOSFET, N, 200V, 5.2A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:5.2A; Resistance, Rds On:0.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:18A; Power Dissipation:50W; Power, Pd:50W; Thermal Resistance, Junction to Case A:2.5°C/W; Voltage, Vds Max:200V

***(Formerly Allied Electronics): IRF510PBF N-channel MOSFET Transistor; 5.6 A; 100 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Flange Mount Power Mosfet - TO-220-3

*** electronic: Transistor MOSFET N-Ch. 5,6A/100V TO220

***ical: Trans MOSFET N-CH 100V 5.6A 3-Pin (3+Tab) TO-220AB

***nsix Microsemi: Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, 100V, 5.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 5.6A; Junction to Case Thermal Resistance A: 3.5°C/W; Pulse Current Idm: 20A; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Single P-Channel 60 V 0.5 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.5Ohm,ID -5.1A,TO-251AA,PD 2.5W,VGS +/-20V

***nell: MOSFET, P, -60V, -5.1A, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power

*** Stop Electro: Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ical: Trans MOSFET N-CH 500V 11.1A Automotive 3-Pin(3+Tab) TO-220FP Tube

*** Electronic Components: Darlington Transistors MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.1pF 50volts C0G +/-0.5pF

***nell: MOSFET, N-CH, 500V, 11.1A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V;

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11.1 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 28

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***ure Electronics: Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251

*** Source Electronics: Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) | MOSFET N-CH 200V 5A I-PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***(Formerly Allied Electronics): MOSFET, 200V, 5A, 600 mOhm, 15 nC Qg, I-Pak

*** Stop Electro: Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 200V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; On State resistance @ Vgs = 10V:600ohm; Package / Case:IPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:12ns; Turn On Time:11ns; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: N-Channel 600 V 5.6 A 800 mO 17.2 nC CoolMOS CE Power Transistor - TO-220FP

***ical: Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Market price

Part #	Mfg.	Description	Stock	Price
SPU04N60C3BKMA1 DISTI # SPU04N60C3BKMA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 4.5A TO-251 RoHS: Compliant Min Qty: 1500 Container: Tube	Limited Supply - Call	1500:$0.7695

Image	Part #	Description
	Mfr.#: SPU04N60C3 OMO.#: OMO-SPU04N60C3	MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3
	Mfr.#: SPU04N60C3 OMO.#: OMO-SPU04N60C3-124	Darlington Transistors MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3
	Mfr.#: SPU04N60C3BKMA1 OMO.#: OMO-SPU04N60C3BKMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 4.5A TO-251
	Mfr.#: SPU04N03LA OMO.#: OMO-SPU04N03LA-1190	New and Original
	Mfr.#: SPU04N60C2 OMO.#: OMO-SPU04N60C2-1190	New and Original
	Mfr.#: SPU04N60C3,04N60C3 OMO.#: OMO-SPU04N60C3-04N60C3-1190	New and Original
	Mfr.#: SPU04N60C3/SL6N60CI OMO.#: OMO-SPU04N60C3-SL6N60CI-1190	New and Original
	Mfr.#: SPU04N60C3XK OMO.#: OMO-SPU04N60C3XK-1190	New and Original
	Mfr.#: SPU04N60S5 OMO.#: OMO-SPU04N60S5-1190	MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS S5
	Mfr.#: SPU04N60S5BKMA1 OMO.#: OMO-SPU04N60S5BKMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 4.5A TO-251

SPU04N60C3XK

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes