SI2316DS-T1-E3

Mfr. #:: SI2316DS-T1-E3
Manufacturer:: Vishay
Description:: MOSFET N-CH 30V 2.9A SOT23-3
Lifecycle:: New from this manufacturer.
Datasheet:: SI2316DS-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI2316DS-T1-E3 more Information

Product Attribute
Attribute Value

Tags: SI2316D, SI2316, SI231, SI23, SI2

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2316DS-T1-E3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2316DS-T1-E3 DISTI # V72:2272_09216800	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant	151	100:$0.4806 25:$0.5520 10:$0.6746 1:$0.7670
SI2316DS-T1-E3 DISTI # V36:1790_09216800	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.4909
SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	39083In Stock	1000:$0.2980 500:$0.3725 100:$0.4712 10:$0.6150 1:$0.7000
SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	39083In Stock	1000:$0.2980 500:$0.3725 100:$0.4712 10:$0.6150 1:$0.7000
SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	36000In Stock	30000:$0.2290 15000:$0.2351 6000:$0.2441 3000:$0.2622
SI2316DS-T1-E3 DISTI # 25790283	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant	151	14:$0.7670
SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316DS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4615 18000:$0.4743 12000:$0.4878 6000:$0.5085 3000:$0.5240
SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2599 18000:€0.2789 12000:€0.3019 6000:€0.3509 3000:€0.5149
SI2316DS-T1-E3 DISTI # 85W2139	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW,No. of Pins:3Pins RoHS Compliant: Yes	0	1000:$0.7060 500:$0.7960 250:$0.9510 100:$1.0500 50:$1.1700 25:$1.2900 1:$1.3600
SI2316DS-T1-E3. DISTI # 15AC0292	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:700mW,No. of Pins:3Pins RoHS Compliant: No	0	30000:$0.4620 18000:$0.4750 12000:$0.4880 6000:$0.5090 1:$0.5240
SI2316DS-T1-E3 DISTI # 781-SI2316DS-T1-E3	Vishay Intertechnologies	MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant	3346	1:$1.2500 10:$1.0300 100:$0.7960 500:$0.6850 1000:$0.5400
SI2316DS-T1 DISTI # 781-SI2316DS	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2316BDS-E3 RoHS: Compliant	0
SI2316DS-T1-E3	Vishay Semiconductors		12392	5334:$0.1250 2001:$0.1500 1:$1.0000
SI2316DS-T1-E3	Vishay Siliconix		15490	7:$0.7500 21:$0.3750 135:$0.2250 668:$0.1500 2335:$0.1125 5557:$0.1013
SI2316DS-T1-E3	Vishay Siliconix		5314
SI2316DS-T1-E3 DISTI # TMOS1381	Vishay Intertechnologies	N-CH 30V 2,9A 50mOhm SOT-23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.3089 6000:$0.2913 9000:$0.2736 12000:$0.2383
SI2316DST1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant	1770
SI2316DS-T1-E3	Vishay Intertechnologies	MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3	MOSFET 30V 3.4A 0.96W 50mohm @ 10V
	Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3	MOSFET 30V 3.4A 0.96W 50mohm @ 10V
	Mfr.#: SI2316DS-T1 OMO.#: OMO-SI2316DS-T1-1190	MOSFET RECOMMENDED ALT 781-SI2316BDS-E3
	Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3-VISHAY	MOSFET N-CH 30V 2.9A SOT23-3
	Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3-VISHAY	MOSFET N-CH 30V 2.9A SOT23-3
	Mfr.#: SI2316DS-T1-E3-CUT TAPE OMO.#: OMO-SI2316DS-T1-E3-CUT-TAPE-1190	New and Original

SI2316DS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes