FGW15N120H

FGW15N120H
Mfr. #:
FGW15N120H
Manufacturer:
Fuji Electric Co Ltd
Description:
Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
Lifecycle:
New from this manufacturer.
Datasheet:
FGW15N120H Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FGW15N1, FGW1, FGW
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
FGW15N120HD
DISTI # 49X9255
Fuji Electric Co LtdIGBT, SINGLE, 1.2KV, 31A, TO-247-3,DC Collector Current:31A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:155W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
    FGW15N120HD
    DISTI # 70241437
    Fuji Electric Co LtdIC,IGBT,High-Speed V-Series,1200V,15A,1550W,TP-247-P2
    RoHS: Compliant
    0
    • 100:$4.8900
    FGW15N120H
    DISTI # FE0000000000862
    Fuji Electric Co LtdPower Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant
    0 in Stock0 on Order
      FGW15N120H-S31PP-P2
      DISTI # FE0000000001754
      Fuji Electric Co LtdDISCRETE IGBT- High Speed V
      RoHS: Compliant
      0 in Stock0 on Order
      • 600:$1.6300
      • 1:$1.7500
      FGW15N120HD-S31PP-P2
      DISTI # FE0000000000863
      Fuji Electric Co LtdDISCRETE IGBT- High Speed V
      RoHS: Compliant
      0 in Stock0 on Order
      • 600:$1.9600
      • 1:$2.1100
      Image Part # Description
      FGW15N120H

      Mfr.#: FGW15N120H

      OMO.#: OMO-FGW15N120H-1190

      Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
      FGW15N120HD

      Mfr.#: FGW15N120HD

      OMO.#: OMO-FGW15N120HD-1190

      IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3
      FGW15N120VD

      Mfr.#: FGW15N120VD

      OMO.#: OMO-FGW15N120VD-1190

      IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
      FGW15N40

      Mfr.#: FGW15N40

      OMO.#: OMO-FGW15N40-1190

      New and Original
      FGW15N40A

      Mfr.#: FGW15N40A

      OMO.#: OMO-FGW15N40A-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of FGW15N120H is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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