DMN3190LDW-7

Mfr. #:: DMN3190LDW-7
Manufacturer:: Diodes Incorporated
Description:: MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
Lifecycle:: New from this manufacturer.
Datasheet:: DMN3190LDW-7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN3190LDW-7 Datasheet DMN3190LDW-7 Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-363-6

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 1 A

Rds On - Drain-Source Resistance:: 190 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 0.4 W

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Series:: DMN3190

Transistor Type:: 2 N-Channel

Brand:: Diodes Incorporated

Forward Transconductance - Min:: 0.7 mS

Fall Time:: 15.6 ns

Product Type:: MOSFET

Rise Time:: 8.9 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 30.3 ns

Typical Turn-On Delay Time:: 4.5 ns

Unit Weight:: 0.000212 oz

Tags: DMN319, DMN31, DMN3, DMN

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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DMN3190LDW-7 Description

***et Japan: Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R

***ark: Mosfet Bvdss: 25V~30V Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3190LDW-7

***ure Electronics: DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363

***ment14 APAC: MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:30V; On Resistance

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363

***nell: MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R

***nell: MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***ure Electronics: Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363

***et: Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R

*** Source Electronics: Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363

***ment14 APAC: MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On

***nell: MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***emi: Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363

***ser: MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM

***Yang: Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel

***ponent Stockers USA: 1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 30V 1.8A SC88/SC70-6

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes

***ure Electronics: Trans MOSFET N-CH 30V 250A Automotive 6-Pin SOT-363 T/R

***des Inc SCT: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***icontronic: Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Mosfet Bvdss: 25V~30V Sot363 T&r 3K

***nell: MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V

***et: Trans MOSFET N/P-CH 30V/30V 0.65A/0.45A 6-Pin SOT-363 T/R

***ark: Mosfet, N/P-Ch, 30V, 0.65A, Sot363; Transistor Polarity:N And P Complement; Continuous Drain Current Id:650Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes |Diodes Inc. DMC3400SDW-13

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N/P-CH, 30V, 0.65A, SOT363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 650mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 310mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): Si1416EDH-T1-GE3 N-channel MOSFET Transistor; 3.9 A; 30 V; 6-Pin SOT-363

***ure Electronics: SI1416EDH Series N-Channel 30 V 3.9 A 12 nC Surface Mount Mosfet - SC-70-6

***nell: MOSFET, N-CH, 30V, 3.9A, SOT-363-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.8W; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)

Market price

Part #	Mfg.	Description	Stock	Price
DMN3190LDW-7 DISTI # DMN3190LDW-7DITR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.0880
DMN3190LDW-7 DISTI # DMN3190LDW-7DICT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1042 500:$0.1360 100:$0.2402 10:$0.4080 1:$0.5700
DMN3190LDW-7 DISTI # DMN3190LDW-7DIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1042 500:$0.1360 100:$0.2402 10:$0.4080 1:$0.5700
DMN3190LDW-7 DISTI # DMN3190LDW-7	Diodes Incorporated	Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R (Alt: DMN3190LDW-7) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0	9000:$0.0836 18000:$0.0799 27000:$0.0765 45000:$0.0744 90000:$0.0734 225000:$0.0715 450000:$0.0697
DMN3190LDW-7 DISTI # DMN3190LDW-7	Diodes Incorporated	Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN3190LDW-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0498 6000:$0.0474 12000:$0.0451 18000:$0.0431 30000:$0.0421
DMN3190LDW-7 DISTI # 70550289	Diodes Incorporated	MOSFET Dual N-Ch 30V 1A Enhanc. SOT363 RoHS: Compliant	0	250:$0.1250 500:$0.0910 1250:$0.0790 2500:$0.0730
DMN3190LDW-7 DISTI # 621-DMN3190LDW-7	Diodes Incorporated	MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss RoHS: Compliant	18789	1:$0.4500 10:$0.2890 100:$0.1240 1000:$0.0950 3000:$0.0720 9000:$0.0640 24000:$0.0600
DMN3190LDW-13 DISTI # 621-DMN3190LDW-13	Diodes Incorporated	MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss RoHS: Compliant	0	10000:$0.0640
DMN3190LDW-7 DISTI # 8270480P	Zetex / Diodes Inc	MOSFET DUAL N-CH 30V 1A ENHANC. SOT363, RL	15000	250:£0.1020 500:£0.0830 1250:£0.0770 2500:£0.0760

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Availability

Stock:: 146
On Order:: 2129
Enter Quantity:

Current price of DMN3190LDW-7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.44~~; ~~$0.44~~

10: ~~$0.29~~; ~~$2.89~~

100: ~~$0.12~~; ~~$12.40~~

1000: ~~$0.10~~; ~~$95.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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