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| PartNumber | DMN3190LDW-7 | DMN3190LDW-13 | DMN3190LDW-13-CUT TAPE |
| Description | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 1 A | 1 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 190 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 2.8 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 2 nC | 2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 0.4 W | 320 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN3190 | DMN31 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 0.7 mS | 700 nS | - |
| Fall Time | 15.6 ns | 15.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.9 ns | 8.9 ns | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30.3 ns | 30.3 ns | - |
| Typical Turn On Delay Time | 4.5 ns | 4.5 ns | - |
| Unit Weight | 0.000212 oz | 0.000265 oz | - |