FCH110N65F-F155

FCH110N65F-F155
Mfr. #:
FCH110N65F-F155
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SuperFET2 650V, 110 mOhm, FRFET
Lifecycle:
New from this manufacturer.
Datasheet:
FCH110N65F-F155 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FCH110N65F-F155 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
110 mOhms
Vgs th - Gate-Source Threshold Voltage:
5 V
Vgs - Gate-Source Voltage:
20 V, 30 V
Qg - Gate Charge:
98 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
357 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
20.82 mm
Length:
15.87 mm
Series:
FCH110N65F
Transistor Type:
1 N-Channel
Width:
4.82 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
30 S
Fall Time:
5.7 ns
Product Type:
MOSFET
Rise Time:
21 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
89 ns
Typical Turn-On Delay Time:
31 ns
Part # Aliases:
FCH110N65F_F155
Unit Weight:
0.225401 oz
Tags
FCH110, FCH11, FCH1, FCH
Service Guarantees

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Part # Mfg. Description Stock Price
FCH110N65F-F155
DISTI # FCH110N65F-F155-ND
ON SemiconductorMOSFET N-CH 650V 35A TO247
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$3.3454
FCH110N65F_F155
DISTI # FCH110N65F-F155
ON SemiconductorTrans MOSFET N-CH 650V 35A 3-Pin TO-247 Tube - Bulk (Alt: FCH110N65F-F155)
Min Qty: 123
Container: Bulk
Americas - 0
  • 615:$2.4900
  • 1230:$2.4900
  • 123:$2.5900
  • 246:$2.5900
  • 369:$2.5900
FCH110N65F_F155
DISTI # FCH110N65F-F155
ON SemiconductorTrans MOSFET N-CH 650V 35A 3-Pin TO-247 Tube - Rail/Tube (Alt: FCH110N65F-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 2700:$2.0900
  • 4500:$2.0900
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
FCH110N65F-F155
DISTI # 48AC0843
ON SemiconductorSF2 650V 110MOHM F TO247L / TUBE0
  • 1000:$3.2800
  • 500:$3.4800
  • 250:$3.7300
  • 100:$4.0700
  • 1:$4.9500
FCH110N65F-F155
DISTI # 512-FCH110N65F_F155
ON SemiconductorMOSFET SuperFET2 650V, 110 mOhm, FRFET
RoHS: Compliant
302
  • 1:$4.5500
  • 10:$3.8700
  • 100:$3.3500
  • 250:$3.1800
  • 500:$2.8500
  • 1000:$2.4700
FCH110N65F-F155Fairchild Semiconductor Corporation 
RoHS: Not Compliant
339
  • 1000:$2.5100
  • 500:$2.6500
  • 100:$2.7500
  • 25:$2.8700
  • 1:$3.0900
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Mfr.#: C3M0120090D

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Mfr.#: B32923C3105M

OMO.#: OMO-B32923C3105M-800

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Availability
Stock:
302
On Order:
2285
Enter Quantity:
Current price of FCH110N65F-F155 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.55
$4.55
10
$3.87
$38.70
100
$3.35
$335.00
250
$3.18
$795.00
500
$2.85
$1 425.00
1000
$2.47
$2 470.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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