IRGS8B60KPBF

Mfr. #:: IRGS8B60KPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: IRGS8B60KPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: DPAK-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 28 A

Pd - Power Dissipation:: 167 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 28 A

Height:: 4.83 mm

Length:: 10.67 mm

Width:: 9.65 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 50

Subcategory:: IGBTs

Part # Aliases:: SP001545230

Unit Weight:: 0.009185 oz

Tags: IRGS8, IRGS, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGS8B60KPBF Description

***ical: Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:167W; Package/Case:D2PAK ;RoHS Compliant: Yes

***nell: IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.2V; Power Dissipation:167W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:56A; Marking, SMD:GS8B60K; Power, Pd:167W; Time, Fall:42ns; Time, Fall Max:42ns; Time, Rise:21ns; Voltage, Vceo:600V

Market price

Part #	Mfg.	Description	Stock	Price
IRGS8B60KPBF DISTI # 31006187	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	550	550:$0.9870
IRGS8B60KPBF DISTI # IRGS8B60KPBF-ND	Infineon Technologies AG	IGBT 600V 28A 167W D2PAK RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
IRGS8B60KPBF DISTI # IRGS8B60KPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRGS8B60KPBF) Min Qty: 363 Container: Bulk	Americas - 0	3630:$0.8769 1815:$0.8939 1089:$0.9289 726:$0.9659 363:$1.0069
IRGS8B60KPBF DISTI # 70018509	Infineon Technologies AG	600V Ultrafast 10-30 kHz COPACK IGBT IN A D2-PAK Package RoHS: Compliant	0	450:$2.4700
IRGS8B60KPBF DISTI # 942-IRGS8B60KPBF	Infineon Technologies AG	IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT RoHS: Compliant	136	1:$2.0500 10:$1.7400 100:$1.3900 500:$1.2200 1000:$1.0100 2500:$0.9380 5000:$0.9040
IRGS8B60KPBF	International Rectifier	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	3250	1000:$0.9100 500:$0.9600 100:$1.0000 25:$1.0400 1:$1.1200
IRGS8B60KPBF	International Rectifier		100

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IRGS8B60KPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes