R6047ENZ1C9

Mfr. #:: R6047ENZ1C9
Manufacturer:: Rohm Semiconductor
Description:: MOSFET 10V Drive Nch MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: R6047ENZ1C9 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: R6047ENZ1C9 more Information

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 47 A

Rds On - Drain-Source Resistance:: 72 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 145 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 120 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-channel

Brand:: ROHM Semiconductor

Forward Transconductance - Min:: 13 S

Fall Time:: 100 ns

Product Type:: MOSFET

Rise Time:: 100 ns

Factory Pack Quantity:: 450

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 260 ns

Typical Turn-On Delay Time:: 50 ns

Part # Aliases:: R6047ENZ1

Unit Weight:: 0.229281 oz

Tags: R6047ENZ1, R6047E, R6047, R604, R60

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

R6047ENZ1C9 Description

***p One Stop Global: Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Bulk

***S: French Electronic Distributor since 1988

***nell: MOSFET, N-CH, 600V, 47A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 120W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***et: Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube

***ure Electronics: N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247

***ark: MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

***ure Electronics: N-Channel 600 V 79 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247

***nell: MOSFET, N-CH, 600V, 40A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

***et: Transistor MOSFET N-Channel 650V 33A 3-Pin TO-247 Tube

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ark: Mosfet, N-Ch, 650V, 33A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***icroelectronics: N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

***el Electronic: STMICROELECTRONICS STW56N65DM2 Power MOSFET, N Channel, 49 A, 650 V, 0.049 ohm, 10 V, 3 V

***nell: MOSFET, N-CH, 650V, 49A, TO247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 49A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.049ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***icroelectronics: N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package

***p One Stop Global: Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N CH, 650V, 33A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

***ure Electronics: Single N-Channel 600 V 60 mOhm 68 nC CoolMOS Power Mosfet - TO-247-3

***nell: MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

R6047ENZ1C9 More Information

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

ROHM R6047ENZ1 N-Channel Power MOSFET: ROHM R6047ENZ1 N-Channel Power MOSFET has low on-resistance and fast switching speed. It has a gate-source voltage (VGSS) guaranteed to be 20V. Drive circuits can be simple and parallel use is easy. It has a Pb-free lead plating and is RoHS compliant.

Market price

Part #	Mfg.	Description	Stock	Price
R6047ENZ1C9 DISTI # R6047ENZ1C9-ND	ROHM Semiconductor	MOSFET N-CH 600V 47A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	164In Stock	900:$4.3245 450:$4.7430 25:$5.7196 10:$5.9990 1:$6.6400
R6047ENZ1C9 DISTI # R6047ENZ1C9	ROHM Semiconductor	Trans MOSFET N-CH 600V ±47A 3-Pin TO-247 Tube (Alt: R6047ENZ1C9) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	250:€3.8600 100:€5.1200 50:€5.6800 10:€6.2300 5:€6.9200 1:€7.5700
R6047ENZ1C9 DISTI # R6047ENZ1C9	ROHM Semiconductor	Trans MOSFET N-CH 600V ±47A 3-Pin TO-247 Tube - Tape and Reel (Alt: R6047ENZ1C9) RoHS: Compliant Min Qty: 450 Container: Reel	Americas - 0
R6047ENZ1C9 DISTI # 99Y2419	ROHM Semiconductor	MOSFET, N-CH, 600V, 47A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:47A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	0	250:$4.7500 100:$4.9700 50:$5.3500 25:$5.7200 10:$6.0000 1:$6.6400
R6047ENZ1C9 DISTI # 755-R6047ENZ1C9	ROHM Semiconductor	MOSFET 10V Drive Nch MOSFET RoHS: Compliant	481	1:$6.6400 10:$6.0000 25:$5.7200 100:$4.9700 250:$4.7500 450:$4.3300 900:$3.7700
R6047ENZ1C9	ROHM Semiconductor		315	184:$10.0160 87:$10.9550 1:$14.0850
R6047ENZ1C9	ROHM Semiconductor		450	1:¥113.3480 100:¥64.2683 450:¥40.7461
R6047ENZ1C9	ROHM Semiconductor	RoHS(ship within 1day)	394	1:$8.4700 10:$6.9700 50:$6.6800 100:$6.5000 500:$6.3600 1000:$6.2600
R6047ENZ1C9 DISTI # 2630122	ROHM Semiconductor	MOSFET, N-CH, 600V, 47A, TO-247 RoHS: Compliant	26	10:£2.9200 5:£2.9300 1:£2.9400

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R6047ENZ1C9

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes