FDP65N06

Mfr. #:: FDP65N06
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 60V 65A TO-220
Lifecycle:: New from this manufacturer.
Datasheet:: FDP65N06 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
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Tags: FDP6, FDP

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FDP65N06 Description

***Components: In a Pack of 5, N-Channel MOSFET, 65 A, 60 V, 3-Pin TO-220 ON Semiconductor FDP65N06

***Semiconductor: N-Channel Power MOSFET, UniFETTM, 60 V, 65 A, 16 mΩ, TO-220

***p One Stop Japan: Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Tube

***i-Key: MOSFET N-CH 60V 65A TO-220

***ser: IGBTs 60V N-Channel MOSFET

***inecomponents.com: 60V, 65A, NCH MOSFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:65A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 60V, 65A, TO-220; Tran; N CHANNEL MOSFET, 60V, 65A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs Typ:2V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***nell: MOSFET, N TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:65A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.016ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:135W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Capacità Ciss Tipica:1670pF; Configurazione Pin:G(1),D(2)S(3); Corrente Id Max:65A; Corrente di Impulso Idm:260A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Modello Case Alternativo:SOT-78B; Resistenza Stato On Max:16mohm; Resistenza Stato On Tipica:13mohm; Resistenza Termica A da Giunzione a Case:0.92°C/W; Temperatura di Esercizio Min:-55°C; Temperatura di Giunzione Tj Max:150°C; Temperatura di Giunzione Tj Min:-55°C; Tensione Vgs Max:2V; Tensione Vgs th Max:4V

Market price

Part #	Mfg.	Description	Stock	Price
FDP65N06 DISTI # V36:1790_06359529	ON Semiconductor	60V, 65A, NCH MOSFET	0	1000:$0.5418
FDP65N06 DISTI # FDP65N06-ND	ON Semiconductor	MOSFET N-CH 60V 65A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1125In Stock	5000:$0.7000 3000:$0.7269 1000:$0.7807 100:$1.1469 25:$1.3460 10:$1.4270 1:$1.5900
FDP65N06 DISTI # FDP65N06	ON Semiconductor	Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP65N06) RoHS: Compliant Min Qty: 417 Container: Bulk	Americas - 0	4170:$0.7399 2085:$0.7589 1251:$0.7689 834:$0.7789 417:$0.7839
FDP65N06 DISTI # FDP65N06	ON Semiconductor	Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP65N06) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.5529 500:€0.5959 100:€0.6459 50:€0.7039 25:€0.7749 10:€0.8609 1:€0.9689
FDP65N06 DISTI # FDP65N06	ON Semiconductor	Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP65N06) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$0.6169 6000:$0.6319 4000:$0.6409 2000:$0.6489 1000:$0.6529
FDP65N06 DISTI # 04M9106	ON Semiconductor	Trans MOSFET N-CH 60V 65A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 04M9106) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	5000:$0.8710 2500:$0.9020 1000:$0.9640 500:$1.1500 100:$1.3100 10:$1.6200 1:$1.8900
FDP65N06 DISTI # 04M9106	ON Semiconductor	N CHANNEL MOSFET, 60V, 65A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:-RoHS Compliant: Yes	64	1:$0.3830 10:$0.3830 100:$0.3830 500:$0.3830 1000:$0.3830 2500:$0.3830 5000:$0.3830
FDP65N06 DISTI # 512-FDP65N06	ON Semiconductor	MOSFET 60V N-Channel MOSFET RoHS: Compliant	1228	1:$1.5700 10:$1.3300 100:$1.0600 500:$0.9360 1000:$0.7750 2000:$0.7220 5000:$0.6950 10000:$0.6680
FDP65N06	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	17193	1000:$0.6800 500:$0.7200 100:$0.7500 25:$0.7800 1:$0.8400
FDP65N06 DISTI # 8063567	ON Semiconductor	MOSFETFAIRCHILDFDP65N06, PK	900	500:£0.7400 250:£0.8040 50:£0.9140 25:£1.0300 5:£1.1520
FDP65N06 DISTI # 2118346	ON Semiconductor	N CHANNEL MOSFET, 60V, 65A, TO-220 RoHS: Compliant	64	1000:$1.2000 500:$1.4400 100:$1.6400 10:$2.0400 1:$2.4200
FDP65N06, DISTI # 1324800	ON Semiconductor	MOSFET, N TO-220	1050	500:£0.6780 250:£0.7240 100:£0.7690 25:£0.9600 5:£1.0500

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FDP65N06

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes