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TK17A80W,S4X

TK17A80W,S4X
Mfr. #:
TK17A80W,S4X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 800V 2050pF 32nC 17A 45W
Lifecycle:
New from this manufacturer.
Datasheet:
TK17A80W,S4X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK17A80W,S4X Datasheet
ECAD Model:
More Information:
TK17A80W,S4X more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
250 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
32 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
45 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Packaging:
Tube
Height:
15 mm
Length:
10 mm
Series:
TK17A80W
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Toshiba
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
80 ns
Typical Turn-On Delay Time:
58 ns
Unit Weight:
0.068784 oz
Tags
TK17A8, TK17A, TK17, TK1
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***k
    V***k
    BY

    The product corresponds to the description. Delivery up to 30 days.

    2019-04-02
    E**q
    E**q
    RU

    The goods did not fit. and i counted on it.

    2019-06-14
    A***v
    A***v
    RU

    The order did not come!

    2019-04-10
    V***a
    V***a
    RU

    Came, but not yet installed.

    2019-04-28
***ark
X35 PB-F POWER MOSFET TRANSISTOR DTMOS TO-220SIS2 PD=45W F=1MHZ
***ical
Trans MOSFET N-CH Si 800V 17A 3-Pin(3+Tab) TO-220SIS Tube
***i-Key
MOSFET N-CH 800V 17A TO220SIS
***
PWR MOS TRANS DTMOS TO-220SIS
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Part # Mfg. Description Stock Price
TK17A80W,S4X
DISTI # 30553949		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 4:$4.2141
TK17A80W,S4X
DISTI # TK17A80WS4X-ND		Toshiba America Electronic ComponentsMOSFET N-CH 800V 17A TO220SIS
RoHS: Compliant
Min Qty: 1
Container: Tube		575In Stock
  • 2500:$1.8354
  • 500:$2.2908
  • 100:$2.8290
  • 50:$3.1050
  • 10:$3.4500
  • 1:$3.8600
TK17A80W,S4X
DISTI # V99:2348_17056875		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 1000:$1.8690
  • 500:$2.2030
  • 250:$2.4760
  • 100:$2.7620
  • 10:$3.0940
  • 1:$4.2141
TK17A80W,S4X
DISTI # V36:1790_17056875		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST0
  • 50000:$1.6260
  • 25000:$1.6280
  • 5000:$1.7860
  • 500:$2.0470
  • 50:$2.0900
TK17A80WS4X
DISTI # TK17A80W,S4X		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSISTOR DTMOS TO-220SIS2 PD=45W F=1MHZ - Rail/Tube (Alt: TK17A80W,S4X)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 50
  • 500:$1.6900
  • 250:$1.7900
  • 150:$1.8900
  • 100:$1.9900
  • 50:$2.0900
TK17A80WS4X(S
DISTI # TK17A80W,S4X(S		Toshiba America Electronic ComponentsTrans MOSFET N-CH 800V 17A 3-Pin SC-67 Tube (Alt: TK17A80W,S4X(S)
RoHS: Compliant
Min Qty: 50
Container: Tube		Asia - 0
    TK17A80WS4X(S
    DISTI # TK17A80W,S4X(S    		Toshiba America Electronic ComponentsTrans MOSFET N-CH 800V 17A 3-Pin SC-67 Tube (Alt: TK17A80W,S4X(S)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€1.5900
    • 100:€1.6900
    • 500:€1.6900
    • 50:€1.7900
    • 25:€1.8900
    • 10:€1.9900
    • 1:€2.0900
    TK17A80W,S4X
    DISTI # 757-TK17A80W    		Toshiba America Electronic ComponentsMOSFET N-Ch 800V 2050pF 32nC 17A 45W
    RoHS: Compliant    		2610
    • 1:$3.8700
    • 10:$3.1100
    • 100:$2.8300
    • 250:$2.5600
    • 500:$2.3000
    • 1000:$1.9400
    • 2500:$1.8400
    TK17A80W,S4X(S
    DISTI # 1250545    		Toshiba America Electronic ComponentsMOSFET N-CHANNEL 800V 17A TO220SIS, PK16
    • 100:£2.8150
    • 50:£2.8500
    • 20:£2.8900
    • 10:£3.1350
    • 2:£3.4800
    TK17A80W,S4XToshiba America Electronic ComponentsMOSFET N-Ch 800V 2050pF 32nC 17A 45W
    RoHS: Compliant    		Americas -
      TK17A80WS4XToshiba America Electronic ComponentsMOSFET PWR MSFT TRANS DTMOS TO-220SIS
      RoHS: Compliant      		Americas -
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        Availability
        Stock:
        Available
        On Order:
        1985
        Enter Quantity:
        Current price of TK17A80W,S4X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $3.87
        $3.87
        10
        $3.11
        $31.10
        100
        $2.83
        $283.00
        250
        $2.56
        $640.00
        500
        $2.30
        $1 150.00
        1000
        $1.94
        $1 940.00
        2500
        $1.84
        $4 600.00
        5000
        $1.77
        $8 850.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
        Start with
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