PartNumber | TK17A80W,S4X | TK17E80W,S1X | TK17E65W,S1X |
Description | MOSFET N-Ch 800V 2050pF 32nC 17A 45W | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | MOSFET Power MOSFET N-Channel |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | 650 V |
Id Continuous Drain Current | 17 A | 17 A | 17.3 A |
Rds On Drain Source Resistance | 250 mOhms | 250 mOhms | 170 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 30 V |
Qg Gate Charge | 32 nC | 32 nC | 45 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 45 W | 180 W | 165 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
Packaging | Tube | - | Tube |
Height | 15 mm | - | 15.1 mm |
Length | 10 mm | - | 10.16 mm |
Series | TK17A80W | TK17E80W | TK17E65W |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.5 mm | - | 4.45 mm |
Brand | Toshiba | Toshiba | Toshiba |
Fall Time | 7 ns | 7 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 24 ns | 15 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | 80 ns | 100 ns |
Typical Turn On Delay Time | 58 ns | 58 ns | 50 ns |
Unit Weight | 0.068784 oz | 0.063493 oz | 0.211644 oz |
Minimum Operating Temperature | - | - | - 55 C |