FCP850N80Z

FCP850N80Z
Mfr. #:
FCP850N80Z
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET
Lifecycle:
New from this manufacturer.
Datasheet:
FCP850N80Z Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FCP850N80Z more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
850 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V, 30 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
136 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperFET II
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FCP850N80Z
Transistor Type:
1 N-Channel
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
3.5 S
Fall Time:
4.5 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
16 ns
Unit Weight:
0.063493 oz
Tags
FCP
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220
***et Europe
SuperFET2 800V 850mOhm Zener embedded, TO220 PKG
***ical
Trans MOSFET N-CH 800V 8A Tube
***i-Key
SUPERFET2 800V 850MOHM ZENER
***ark
Mosfet, N-Ch, 800V, 8A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.71ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:136W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 800V, 8A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.71ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Part # Mfg. Description Stock Price
FCP850N80Z
DISTI # V99:2348_16116256
ON SemiconductorSUPERFET2 800V 850MOHM ZENER E755
  • 2500:$0.9982
  • 1000:$1.0517
  • 500:$1.2649
  • 100:$1.4358
  • 10:$1.5167
  • 1:$1.7505
FCP850N80Z
DISTI # V36:1790_16116256
ON SemiconductorSUPERFET2 800V 850MOHM ZENER E0
  • 400000:$0.6343
  • 80000:$0.6367
  • 8000:$0.6396
  • 800:$0.6400
FCP850N80Z
DISTI # FCP850N80Z-ND
ON SemiconductorMOSFET N-CH 800V 8A
RoHS: Compliant
Min Qty: 800
Container: Tube
Temporarily Out of Stock
  • 800:$1.0005
FCP850N80Z
DISTI # 33134473
ON SemiconductorSUPERFET2 800V 850MOHM ZENER E21600
  • 800:$0.6400
FCP850N80Z
DISTI # 25895789
ON SemiconductorSUPERFET2 800V 850MOHM ZENER E755
  • 9:$1.7505
FCP850N80Z
DISTI # FCP850N80Z
ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG - Bulk (Alt: FCP850N80Z)
Min Qty: 298
Container: Bulk
Americas - 0
  • 2980:$1.0369
  • 1490:$1.0629
  • 894:$1.0759
  • 596:$1.0899
  • 298:$1.0979
FCP850N80Z
DISTI # FCP850N80Z
ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG - Rail/Tube (Alt: FCP850N80Z)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 8000:$0.6719
  • 4800:$0.6889
  • 3200:$0.6979
  • 1600:$0.7069
  • 800:$0.7109
FCP850N80Z
DISTI # FCP850N80Z
ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG (Alt: FCP850N80Z)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.7569
  • 500:€0.7659
  • 100:€0.7819
  • 50:€0.7979
  • 25:€0.8249
  • 10:€0.9299
  • 1:€1.0729
FCP850N80Z
DISTI # FCP850N80Z
ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG (Alt: FCP850N80Z)
RoHS: Compliant
Min Qty: 800
Asia - 0
  • 40000:$0.8926
  • 20000:$0.9075
  • 8000:$0.9388
  • 4000:$0.9723
  • 2400:$1.0083
  • 1600:$1.0471
  • 800:$1.0890
FCP850N80Z
DISTI # 84Y5820
ON SemiconductorMOSFET, N-CH, 800V, 8A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.71ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes392
  • 5000:$1.2900
  • 2500:$1.3300
  • 1000:$1.4100
  • 500:$1.6700
  • 100:$1.8700
  • 10:$2.2800
  • 1:$2.6500
FCP850N80Z
DISTI # 512-FCP850N80Z
ON SemiconductorMOSFET 800V 8A NChn MOSFET SuperFET II, FRFET
RoHS: Compliant
928
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0800
  • 500:$0.9520
  • 1000:$0.7890
  • 2500:$0.7780
FCP850N80ZFairchild Semiconductor Corporation 
RoHS: Not Compliant
750
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
FCP850N80Z
DISTI # 2565210
ON SemiconductorMOSFET, N-CH, 800V, 8A, TO-220-3
RoHS: Compliant
392
  • 1600:$1.8900
  • 800:$2.0500
  • 100:$2.9300
  • 10:$3.6400
  • 1:$4.0200
FCP850N80Z
DISTI # 2565210
ON SemiconductorMOSFET, N-CH, 800V, 8A, TO-220-3392
  • 500:£0.6900
  • 250:£0.7360
  • 100:£0.7830
  • 25:£0.9880
  • 5:£1.0800
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OMO.#: OMO-FL7740MX

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Mfr.#: IPP80R600P7XKSA1

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8020.5068.G

Mfr.#: 8020.5068.G

OMO.#: OMO-8020-5068-G-SCHURTER

SHF 6.3X32 FUSE 1A F
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Availability
Stock:
928
On Order:
2911
Enter Quantity:
Current price of FCP850N80Z is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.60
$1.60
10
$1.36
$13.60
100
$1.08
$108.00
500
$0.95
$476.00
1000
$0.79
$789.00
2500
$0.78
$1 945.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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