IPB036N12N3 G

Mfr. #:: IPB036N12N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB036N12N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB036N12N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 120 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 2.9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 211 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 98 S

Fall Time:: 21 ns

Product Type:: MOSFET

Rise Time:: 52 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 76 ns

Typical Turn-On Delay Time:: 35 ns

Part # Aliases:: IPB036N12N3GATMA1 IPB36N12N3GXT SP000675204

Unit Weight:: 0.056438 oz

Tags: IPB036N12N3G, IPB036N12N3, IPB036, IPB03, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB036N12N3 G More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB036N12N3GATMA1 DISTI # V72:2272_06378504	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	980	500:$3.7270 250:$4.1280 100:$4.3500 25:$4.9429 10:$4.9980 1:$5.7480
IPB036N12N3GATMA1 DISTI # IPB036N12N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	764In Stock	500:$4.3574 100:$5.2007 10:$6.3250 1:$7.0300
IPB036N12N3GATMA1 DISTI # IPB036N12N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	764In Stock	500:$4.3574 100:$5.2007 10:$6.3250 1:$7.0300
IPB036N12N3GATMA1 DISTI # IPB036N12N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.8211
IPB036N12N3 G DISTI # 30580651	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 RoHS: Compliant	1852	100:$4.5645 50:$5.5717 10:$5.6227 4:$6.4132
IPB036N12N3GATMA1 DISTI # 31308714	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	980	500:$3.7210 250:$4.1200 100:$4.3420 25:$4.9330 10:$4.9879 2:$5.7370
IPB036N12N3 G DISTI # 30578830	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 RoHS: Compliant	956	4:$7.1250
IPB036N12N3 G DISTI # IPB036N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin TO-263 T/R (Alt: IPB036N12N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 3000	1000:$4.1353 2000:$4.0019 3000:$3.8769 5000:$3.7594 10000:$3.7033 25000:$3.6488 50000:$3.5959
IPB036N12N3GATMA1 DISTI # IPB036N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB036N12N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.4900 2000:$3.3900 4000:$3.2900 6000:$3.1900 10000:$3.0900
IPB036N12N3GATMA1 DISTI # 47W3463	Infineon Technologies AG	MOSFET, N CHANNEL, 120V, 180A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	1169	1:$6.5700 10:$5.5900 25:$5.3400 50:$5.0900 100:$4.8400 250:$4.6000 500:$4.1200
IPB036N12N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	2185	1000:$2.6800 500:$2.8300 100:$2.9400 25:$3.0700 1:$3.3000
IPB036N12N3 G DISTI # 726-IPB036N12N3GXT	Infineon Technologies AG	MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	1746	1:$6.5700 10:$5.5900 100:$4.8400 250:$4.6000 500:$4.1200 1000:$3.4800
IPB036N12N3GATMA1 DISTI # 726-IPB036N12N3GATMA	Infineon Technologies AG	MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	311	1:$6.5700 10:$5.5900 100:$4.8400 250:$4.6000 500:$4.1200 1000:$3.4800
IPB036N12N3GATMA1 DISTI # 7545428	Infineon Technologies AG	MOSFET N-CH 120V 180A OPTIMOS3 TO263, EA	379	1:£4.8500 10:£3.8400 50:£3.5100 250:£3.1700 500:£2.8300
IPB036N12N3GATMA1 DISTI # 7545428P	Infineon Technologies AG	MOSFET N-CH 120V 180A OPTIMOS3 TO263, RL	1451	10:£3.8400 50:£3.5100 250:£3.1700 500:£2.8300
IPB036N12N3G	Infineon Technologies AG		569
IPB036N12N3 G	Infineon Technologies AG		376
IPB036N12N3 G	Infineon Technologies AG	INSTOCK	105
IPB036N12N3-G	Infineon Technologies AG	INSTOCK	105
IPB036N12N3GATMA1 DISTI # 2212819	Infineon Technologies AG	MOSFET, N-CH, 120V, 180A, TO263-7 RoHS: Compliant	1652	1:£4.6100 10:£3.9200 100:£3.3900 250:£3.2100 500:£2.8900
IPB036N12N3 G DISTI # C1S322000133246	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	956	100:$4.1500 50:$5.0700 10:$5.1200 1:$5.7000
IPB036N12N3 G DISTI # C1S322000438099	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1852	100:$3.5800 50:$4.3700 10:$4.4100 1:$5.0300
IPB036N12N3GATMA1 DISTI # C1S322000643035	Infineon Technologies AG	MOSFETs RoHS: Compliant	980	250:$4.1200 100:$4.3420 25:$4.9330 10:$4.9879 1:$5.7370
IPB036N12N3GATMA1 DISTI # 2212819	Infineon Technologies AG	MOSFET, N-CH, 120V, 180A, TO263-7 RoHS: Compliant	1169	1:$10.4000 10:$8.8500 100:$7.6600 250:$7.2800 500:$6.5300 1000:$5.5100
IPB036N12N3 G	Infineon Technologies AG	RoHS(ship within 1day)	300	1:$6.7700 10:$5.7700 50:$5.0000 100:$4.7700 500:$4.5800 1000:$4.4800

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IPB036N12N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.56~~; ~~$6.56~~

10: ~~$5.58~~; ~~$55.80~~

100: ~~$4.83~~; ~~$483.00~~

250: ~~$4.59~~; ~~$1 147.50~~

500: ~~$4.11~~; ~~$2 055.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB036N12N3 G

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