IPB036N12N3

IPB036N12N3 G vs IPB036N12N3-G vs IPB036N12N3

 
PartNumberIPB036N12N3 GIPB036N12N3-GIPB036N12N3
DescriptionMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3INSTOCK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance2.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge211 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min98 S--
Fall Time21 ns--
Product TypeMOSFET--
Rise Time52 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time76 ns--
Typical Turn On Delay Time35 ns--
Part # AliasesIPB036N12N3GATMA1 IPB36N12N3GXT SP000675204--
Unit Weight0.056438 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB036N12N3 G MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
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