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SI1417EDH-T1-E3

SI1417EDH-T1-E3
Mfr. #:
SI1417EDH-T1-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SI1417EDH-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Packaging
Reel
Part-Aliases
SI1417EDH-E3
Unit-Weight
0.000265 oz
Mounting-Style
SMD/SMT
Tradename
TrenchFET
Package-Case
SOT-363-6
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 P-Channel
Pd-Power-Dissipation
1 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
1400 ns
Rise-Time
1400 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuous-Drain-Current
2.7 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Rds-On-Drain-Source-Resistance
160 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
4900 ns
Typical-Turn-On-Delay-Time
600 ns
Channel-Mode
Enhancement
Tags
SI1417EDH-T, SI1417E, SI1417, SI141, SI14, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 12V 2.7A 6-Pin SC-70 T/R
***C
Trans MOSFET P-CH 12V 2.7A 6-Pin
***ment14 APAC
MOSFET, P CH, -12V, -2.7A, SOT-363-6
***i-Key
MOSFET P-CH 12V 2.7A SC70-6
***ser
P-Channel MOSFETs 12V 3.3A
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-3300mA; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.160ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:-0.45V; Power Dissipation, Pd:1W ;RoHS Compliant: Yes
***nell
MOSFET, P CH, -12V, -2.7A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.133ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-
Part # Mfg. Description Stock Price
SI1417EDH-T1-E3
DISTI # SI1417EDH-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 2.7A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1417EDH-T1-E3
    DISTI # SI1417EDH-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 12V 2.7A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI1417EDH-T1-E3
      DISTI # SI1417EDH-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 12V 2.7A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI1417EDH-T1-E3
        DISTI # 781-SI1417EDH-E3        		Vishay IntertechnologiesMOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
        RoHS: Compliant        		0
          SI1417EDH-T1
          DISTI # 781-SI1417EDH          		Vishay IntertechnologiesMOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
          RoHS: Not compliant          		0
            SI1417EDH-T1-E3Vishay Intertechnologies 121
              SI1417EDH-T1-E3
              DISTI # 2335279              		Vishay IntertechnologiesMOSFET, P CH, -12V, -2.7A, SOT-363
              RoHS: Compliant              		0
              • 1:$1.0500
              • 10:$0.7660
              • 100:$0.7180
              • 250:$0.6220
              • 500:$0.5270
              • 1000:$0.4150
              • 3000:$0.3350
              • 6000:$0.3180
              Image Part # Description
              SI1417EDH-T1-GE3

              Mfr.#: SI1417EDH-T1-GE3

              OMO.#: OMO-SI1417EDH-T1-GE3

              		 MOSFET
              SI1417EDH-T1-E3

              Mfr.#: SI1417EDH-T1-E3

              OMO.#: OMO-SI1417EDH-T1-E3

              		 MOSFET RECOMMENDED ALT 781-SI1441EDH-T1-GE3
              SI1417EDH

              Mfr.#: SI1417EDH

              OMO.#: OMO-SI1417EDH-1190

              		 New and Original
              SI1417EDH-T1

              Mfr.#: SI1417EDH-T1

              OMO.#: OMO-SI1417EDH-T1-1190

              		 MOSFET RECOMMENDED ALT 781-SI1441EDH-T1-GE3
              SI1417EDH-T1-GE3

              Mfr.#: SI1417EDH-T1-GE3

              OMO.#: OMO-SI1417EDH-T1-GE3-VISHAY

              		 MOSFET P-CH 12V 2.7A SC-70-6
              SI1417EDH-T1-E3

              Mfr.#: SI1417EDH-T1-E3

              OMO.#: OMO-SI1417EDH-T1-E3-VISHAY

              		 IGBT Transistors MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
              Availability
              Stock:
              Available
              On Order:
              4500
              Enter Quantity:
              Current price of SI1417EDH-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
              Reference price (USD)
              Quantity
              Unit Price
              Ext. Price
              1
              $0.00
              $0.00
              10
              $0.00
              $0.00
              100
              $0.00
              $0.00
              500
              $0.00
              $0.00
              1000
              $0.00
              $0.00
              Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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